The Efficiency Calculation Of Cobalt Oxide For Artificial Photosynthesis With Exponential-doping

The semiconductor material Co3O4 was selected to the measurement of artificial photosynthesis,but from sunlight capture to water splitting,the conversion efficiency of the whole process was below 10%.Doping is one of the via to improve the conversion efficiency.In this paper we will calculate the conversion efficiency of exponential-doped Cobalt oxide(Co3O4)layer with different thickness by physics theories.The efficiency curve is composed by the efficiencies with different incident energy.We compare the efficiency curves to find the best thickness which can achieve highest conversion efficiency.Due to the regular pattern of exponential-doping is along the function of exponential function from one surface of the semiconductor layer to the another surface,we can calculate that which surface under the illumination will lead to higher conversion efficiency,then we will go on calculating to find the best thickness of the layer which can get highest conversion efficiency.According to the result,the surface with lower doping concentration under the sunlight irradiate can get higher efficiency and the 4.4?m thickness can get highest efficiency.