Preparation Of Ybco Coated Conductor Ni-W Substrate By All Chemical Solution Method

YBa2Cu3O7-?(YBCO) superconducting coated conductor, the second generation high-temperature superconducting tape, was widely used in the field of electric power due to its good and unique physical traits. Nowadays, the high-cost physical method was the proven technology for the preparation of high-quality buffer layer and YBCO coated conductor.However, the low-cost chemical solution deposition(CSD) was the key for, the large scale production of YBCO superconducting coated conductor. Additionally, the CSD was also an important method employed to fabricate the high-quallity buffer layer and even the YBCO film.In this study, YBCO superconducting coated conductor was prepared on a Ni-5%W substrate. The buffer layer and YBCO layer were both fabricated by chemical method. The single thin film SrTiO3(STO) and the multiple thin films CeO2/La2Zr2O7(LZO) had a high lattice matching with substrate and YBCO layer. Therefore, the YBCO films were epitaxially grown on the two buf,fer layers, respectively, In this paper, the preparation of buffer layer solutions, the processing technology and the preparation of YBCO film were studied. The following conclusions were drawn:(1) The SrTiO3(STO) films and La3+ doped STO(LSTO) films were coated on the Ni-5%W substrate by CSD method. The preparation process of LSTO thin films with single(100)-oriented were determined.(2) On the basis of the original preparation of the LZO film, the LZO precursor solution with different lanthanum and zirconium ratio was prepared. In the mixed atmosphere of 10%H2-N2 and 1050 ? for 1h heat treatment, three kinds of thin films were obtained: La3+/Zr4+ =1,La3+/Zr4+= 1.1 , La3+/Zr4+=1.2, and the orientation of the thin film, the in-plane texture and out-plane texture, the surface roughness and density have been improved.(3) Nitrate salt was selected as the raw material for the preparation of the CeO2 solution,and then the heat treatment was performed at 300 ? for 30 min and at 1050 ? for 25 min.After then, CeO2 thin films with good quality were also obtained.(4) The CeO2/LZO m,ultiple buffer layer with good quality (single orientation, good surface texture and smooth surface) were successfully prepared based on the optimized preparation technology for the CeO2 and LZO thin film.(5) The YBCO thin film derived from YBCO solution with Y3+: Ba2+: Cu2+ = 1: 2: 3 was epitaxially grown on the obtained CeO2/LZO multiple buffer layer. The YBCO film with good surface and good orientation, and finally achieved breakthrough with Jc ? 1.00MA / cm2 (77 K,0T).