The Preparation Of Molybdenum Disulfide And The Study Of Its Photoelectric Properties

In recent years,two-dimensional materials?TMDs?such as graphene had attracted more and more attention for their outstanding properties.The study on graphene is the most extensive,but the application of graphene is limited by the zero band gap characteristics.On the other hand,Molybdenum disulfide?MoS₂?not only remains the advantages of graphene,but also overcomes the zero-band gap of graphene.So,it catches the eye of researcher since it was found.At present,the area of MoS₂ films prepared by chemical vapor deposition?CVD?is small and the cost is high.In the thesis,the conventional CVD method was improved to obtain the large area and uniform MoS₂ films.Then its photoelectric properties were studied.Firstly,growth conditions,such as growth time,growing temperature,powder quality and the carrier gas flow rate,were optimized and the best parameters were obtained.Raman spectroscopy and Atomic force microscope measurement showed that the prepared large-area and uniform MoS₂ films were bilayer.Secondly,the MoS₂ field effect transistors were fabricated and their electrical properties were studied.It was found that the drain-source current can be controlled by gate voltage.Finally,MoS₂ photoelectric detectors were fabricated and their photoelectric properties were analyzed.MoS₂ photoresistance was the most sensitive to the light of720 nm.At this wavelength,the sensitivity and responsivity were 3.5 and 2.5 × 10-1A/W,and quantum efficiency was reached its maximum.