The Influent Of Annealing Process On Fe₃Si Thin Films Prepared By Resistive Thermal Evaporation

With the high-speed development of society,the main developmental direction of electronic information equipment is digital,intelligent,small,high frequency and ultra high frequency type.The study of thin-film material has attracted more attention.Fe₃Si thin films,with high Curie temperature and high spin polarization,have broad prospect of application in the field of spin electronic devices.The ferromagnetic Fe₃Si thin films were prepared by resistive thermal evaporation and vacuum annealing methods.The influence of process on the formation of ferromagnetic Fe₃Si films were investigated.The conclusions were obtained as follow:?1?The Fe-Si films in 2.5:1,2.75:1,3:1,3.25:1 and 3.5:1 compositions were deposited on the Si?111?substrate for 2 hours at the annealing temperature of 500 950 ?.It shows that the better Fe₃Si film is prepared in 3:1 composition at the annealing temperature of800 ? by analyzing XRD data.And the rest Fe-Si films are not ideal by contrasting XRD datas.It is due to the Si atoms in the Si substrate are diffused into the vapor-deposited thin film layer at a high temperature,so that the deposited thin films in different compositions are not easily controlled.?2?The Fe-Si films in 2.5:1,2.75:1,3:1,3.25:1 and 3.5:1 compositions are deposited on the quartz substrate for 2 hours at the annealing temperature of 500 950 ?.The results show that the single phase Fe₃Si thin film is obtained in 3:1 and 3.25:1compositions at the annealing temperature of 900 ? by analyzing XRD data.?3?The Fe-Si films in 3:1 composition is deposited on the quartz substrate for 2 hours at the annealing temperature of 700 950 ?.It shows that Fe₃Si thin film crystallizes at the annealing temperature of 500 850 ? by scanning electron microscopy.And the crystal is more dense and orderly under the 850 ? conditions.When the annealing temperature rise to900 ?,the crystal is smaller,and the film becomes denser.When the annealing temperature rise to 950 ?,the crystals are fused together,and the surface of the film becomes rough.The resistivity and the sheet resistance of the film increase first and then decrease with the annealing temperature.