Fabrication And Optoelectronic Properties Of GaInPSb And InAsSb Alloy Nanowires

GaSb is one of the ?-? semiconductor material,the band gap of it is 0.726eV,the electron mobility is 850 cm/(?-s),and is widely used,which usually can be used as infrared detector,light emitting diode,transistor,laser diode etc.Because GaSb forms an increasingly important component of mid-infrared optoelectronic devices,multifarious alloys of it have been investigated in some detail.As an important ?-? semiconductor material,more and more attention has been paid on InP in recent years due to its unique optical and electrical properties.While as a direct-gap semiconductor,InP is greatly significant in nano/microtechnology,on account of most optoelectronic devices operating at the communications wavelength of 1.55 ?m,it serves as the substrate.Numerous studies of the band structure parameters for InP and its alloys have been carried out.Nevertheless infrared photodetectors based on binary and ternary alloys,such as InAs,InPAs,and InGaSb nanowires have been widely reported,to our knowledge,the quaternary GaInPSb alloy nanowires in photoelectric measurement is rarely reported.By allowing the GaSb to match the InP,the lattice mismatch between GaSb and InP is 3.72%,which provides a good basis for the formation of GaInPSb alloys.In this article,GaInPSb alloy nanowires were first synthesized via a simple chemical vapor deposition(CVD)method.The mainly content generalization of this paper up as follows:(1)High quality GaInPSb alloy nanowires were first synthesized via two step simple chemical vapor deposition(CVD)method.SEM image shows that the synthesized GaInPSb NWs have a length of up to 20 ?m and a diameter ranging from 50 nm to 100 nm,Which also indicating a typical metal catalyzed vapor-liquid-solid(VLS)mechanism.TEM image illustrates that the as-grown nanowires are high-quality single crystals and confirmes that the synthesis of GalnPSb alloy nanowires are single and homogeneous alloy nanowires.Raman measurements show that the alloy nanowires synthesized with different components.(2)The alloy nanowires photodetector were fabricated by photolithography and thermal evaporation method using the synthesized GalnPSb alloy nanowires.The ?-?curves of the GalnPSb alloy nanowire devices at different bias voltages show that the nanowires have n-type conduction behavior.The study on the photoelectric response of GaInPSb alloy nanowire detector shows that the detector is very sensitive to the light intensity,and can distinguish the small change of light intensity.At the same time,it reflects the fact the single nanowire device is one kind of typical photon dependent photoresist,which is beneficial to the application of optical power detection,and can be used as a good component of infrared detection equipment.(3)The composition partially tuanble InAsSb alloy nanowires were synthesized via two step simple chemical vapor deposition(CVD)method.The composition and crystal quality of the nanowire were studied.Based on the results of the measurement,the possibility of explanation is given.Nano devices were fabricated using the synthetic nanowires and the transistor characteristics were also measured.