| Two-dimensional nanomaterials are becoming a hot spot in the field of materials research because of peculiar surface physical properties and film physical properties.While two-dimensional transition metal dichalcogenides material possess many unique properties such as high mobility,tunable wide band gap,atomic height,so that it becomes to be a suitable candidate for silicon in the field of optoelectronic device?low energy-consumption electronic device and switching device during post-silicon.Because of high splitting energy of spin orbit in valence band,tungsten diselenide becomes to an ideal platform to research spin polarization and valley polarization.Taking advantage of long-time spin relaxation?low-energy transport and easy manipulation,spin valves based on 2D TMDs material have huge application prospect in the field of low energy-consumption electronic device.The paper studies that two-dimensional transition metal sulfide material were mechanically exfoliated on SiO2/Si substrate and fabricated to a spin valve device to research electronic and magnetic transport.The main contents are as follows:1?Two-dimensional transition metal molybdenum sulfide was studied on basic electronic properties.MoS2 based horizontal spin valve device was fabricated,it was investigated that mobility is 0.15 cm2V-1S-11 and resistivity is 1.25×10-2??m,while the on/off ratio is up to 103.Our work proves that MoS2 has a single-carrier transport property and it is consistent with other group's result.2?Two-dimensional transition metal tungsten sulfide was studied on basic electronic properties.WS2 based horizontal spin valve device was fabricated,it was investigated that mobility is 12.9 cm2V-1S-1and resistivity is 3.4×10-3??m.The on/off ratio is up to 105.3?Two-dimensional transition metal titanium sulfide was studied on basic electronic properties.TiS2 based horizontal spin valve device was fabricated,it was investigated that resistivity is 2.35×10-3??m and mobility is 0.05 cm2V-1S-1.We prove that TiS2 has a semi-metal transport property according to state density and experimental result.4?Two-dimensional transition metal tungsten diselenide was studied on basic electronic properties and spin transport.WSe2 based spin valve was fabricated,it was investigated that mobility is 26 cm2V-1S-11 and electric on/off ratio is up to 105,hole on/off ratio is up to 103.We first successfully observed spin valve effect based WSe2 spin valve,and analyzed the temperature characteristic of magnetic resistance to obtain temperature coefficient?=8.1×10-5K-3/23/2 and current characteristic of magnetic resistance. |
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