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Optical And Electrical Properties Of N/B Doped Graphene

Posted on:2018-02-22Degree:MasterType:Thesis
Country:ChinaCandidate:Z DangFull Text:PDF
GTID:2321330566467418Subject:Communication and Information System
Abstract/Summary:PDF Full Text Request
The key boding structure of graphene into unique,it has excellent mechanical,thermal,optical,chemical and electronic properties.Thus,it has been widely used in the fields of nano electronics,optoelectronics,electrochemistry,optics,biology,electronics and machinery.Graphene is a zero band gap material,which limits its application,especially in the field of optoelectronics.It is one of the key technologies that how to effectively open graphene band gap can really play the role of graphene in the field of nano-electronics,broaden the scope of application of graphene.Therefore,it is of great significance to study how to open the band gap of graphene.This paper study the optical and electrical properties of nitrogen(N)/boron(B)-doped graphene and design a graphene microstrip antenna.The specific contents are as follows:(1)Based on the Kubo equation,the basic optical and electrical properties of graphene have been studied,including conductivity,dielectric constant,impedance,transmittance and SPP wave length.(2)The intrinsic graphene and N/B doped graphene model have been established using Materials studio 8.0.The band structure,density of states,optical and electronic properties have been investigated using density functional theory,including absorption spectrum,reflection spectra,refractive index and dielectric absorption function.(3)The design of graphene microstrip antenna is presented,and the return loss,standing wave ratio and radiation pattern of the antenna are analyzed.It is found that the influence of chemical potential on the optical and electronic properties of graphene is significant,but very little influence on the temperature,and with the increase of frequency,optical and electronic properties will eventually remain unchanged;N/B doping cansame doping concentration,the N doping is more effective than the B doping on the opening of the graphene band gap;microstrip antenna with wide bandwidth,high integrated level,stable performance,easy to adjust the working frequency and other advantages.The results of this study can provide theoretical basis for the application of graphene in optoelectronic devices in the future.
Keywords/Search Tags:Graphene, Doping of N/B, Optical and electrical properties
PDF Full Text Request
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