The Large Area Continuous Preparation Of Buffer Layer For CIGS Thin Film Solar Cells

In this paper, the research content as part of the 863 key projects which named 5MW Flexible substrate copper indium gallium selenide thin film solar cells complete sets of manufacturing process technology research and development. Mainly for copper indium gallium selenide(hereinafter referred to as the CIGS thin film solar cell buffer layer cadmium sulfide?CdS? to continuous preparation methods for the preparation by the detailed research.Main research contents include: the laboratory small area of the preparation of CdS thin film and its performance tests, laboratory area to explore the preparation of CdS thin film technology, continuous preparation of CdS thin film devices, realize the Roll- to- Roll continuous preparation of CdS thin film and performance meet the requirements of CIGS thin film solar cell design.Small area in the laboratory?6 cm×2 cm? CdS thin film preparation research, based on the chemical bath?CBD? under the acetate system depend on the substrate of polyimide?PI? were uniform density of CdS thin films, this paper studies in the process of preparation of ammonia concentration and water bath temperature on the influence of CdS thin film quality. The results show that the laboratory small area better technology conditions for preparation of CdS thin film: 1×10-3 mol/L?CH₃COO?₂ Cd, 1.3×10-3 mol/L NH₃·H₂O, 0.01 mol/L SC?NH₂?₂, 3×10-3 mol/L CH₃COONH₄, 75 ? water bath temperature, deposition time for 30 minutes.This conditioned response from CdS thin films used in PI substrate CIGS thin film solar cells, the photoelectric conversion efficiency of 11.0%.In the laboratory area?30 cm×30 cm? CdS thin film preparation research, this article through a small area of CdS thin film preparation technology conditions, combined with large area encountered problems during the preparation of CdS thin films, to adjust process conditions, adjusted ammonia concentration and water bath temperature conditions as follows: 5×10-3 mol/L?CH₃COO?₂ Cd, 0.05 mol/L SC?NH₂?₂, 1.5×10-2 mol/L CH₃COONH₄, 6.5×10-3 mol/L NH₃·H₂O, 75 ? water bath temperature, deposition time of 10 minutes.This conditioned response from CdS thin films used in PI substrate CIGS thin film solar cells, the photoelectric conversion efficiency of 9.12%.In terms of continuous preparation of CdS thin film device design, preparation technology and experience in the laboratory, research by the stationary solution to dynamic solution deposition mechanism, implying that the design of the equipment.The analysis to the design of some equipment sample and after extensive discussions, finally decided to adopt the overflow way design continuous preparation of CdS thin film devices, and complete equipment manufacturing.CdS preparation equipment manufactured relief way, through the exploration of equipment process, finally to achieve continuous preparation of CdS thin films, the technology conditions as follows: 3×10-3 mol/L?CH₃COO?₂ Cd, 1.5 mol/L NH₃·H₂O, 0.45 mol/L SC?NH₂?₂, water bath temperature was 60 ?, deposition time of 10 minutes.