The Preparation Of NiO Films With The Research Of Photovoltaic And Electrochromic Properties

In recent years, the Organic-inorganic Hybrid Perovskite Solar Cell, which has the characteristics of low cost, low energy consumption, simple structure, environment friendly, has became the hotspot of research about the emerging third generation solar cell technology. However, the common organic hole transport materials, Spiro-OMeTAD, is expensive and poor stability. It limit the development of the industrialization of the future. NiO is a kind of p-type and wide band gap semiconductor material with typical 3D electronic band structure, excellent optical properties and electrical properties. It is widely used in dye sensitized solar cells and electric induced discoloration devices. The self electrooptic electrochromic device system combined with the solar cell and the electrochromic device has a wide range of application prospects in the fields of smart windows, information display and military camouflage. NiO plays an important role in the materials and systems. The paper apply the method of magnetron sputtering and Sol-gel prepared the NiO film and the preparation conditions of NiO thin film structure, morphology, optical and Electrochemical Properties Characterization and optimization of different process parameters and of the electrical photochromism and the hole transport layer material used in p-NiO/CH3NH3 Pb I3/n-PCBM perovskite type solar cell.1. By Sol-gel spin coating method preparing amorphous NiO thin films on ITO substrate. Effects of heat treatment temperature, spin coating speed, the number of spin coating and sol PVP solubility on Electrochromic Properties of NiO films influence. Results showed that when PVP concentration was low, the NiO sol viscosity decreased, in spin coating process, due to the sol and ITO substrate adhesion is easy to throw off, the spin coated film is very thin; the amount of PVP doped, spin coating speed, spin coating layers and heat treatment temperature can improve the NiO thin films during heat treatment process due to the stress caused by thermal expansion of the organic matter decomposition in a timely manner to, so as to avoid the film because of internal stress in the pores, cracks and other defects, to improve the morphology of the films. Get laboratory sol-gel spin coating method was the optimum process conditions of NiO thin films, namely PVP content is 1.0at% of the sol, spin coating speed of 3000 rpm, drying temperature is 80?C, with 300?C to 3 rates of warming heat treated 2h, NiO film smooth and dense, in visible light region of good light transmission, the optical modulation reached 71.1%.2. By DC magnetron sputtering on ITO substrate sputtering deposition of crystalline NiO films. The experiment found that after heat treatment, is conducive to the growth of NiO crystal, improve the quality of the film, improve the transmittance ratio of NiO thin films, lead to the light transmission rate was more than 100%. When the heat treatment temperature was 300?C, the crystal along the crystal face(200) was the best, when the heat treatment temperature was more than 500?C, the ITO film appeared crack. In addition, the thickness of NiO film deposited by DC magnetron sputtering method is too high and dense, which leads to the active point of the surface state of the film can not fully activated during the electrochemical experiments, which is only 32.4% in the 200 time spectrum modulation range.3. In the process of solar cell assembly, the quality of perovskite film is very important to the performance of the battery. The experiment found that two-step solution method using the assembly at 2000 rpm spin rate perovskite crystal surface particle size uniformity, high smoothness, good absorbency. Crystallization time in 30 min can significantly improve the battery PCE and crystallization process in the applied temperature can effective control the perovskite crystal size and suitable thickness of perovskite type solar battery hole transport layer, reduce the electron and hole in transmission due to the grain boundary generated energy loss, improve the cell performance parameters. When the crystallization temperature is 120?C, the PCE of the battery reaches the highest value of 5.54%.4. Based on the above Perovskite Thin film process, the NiO thin film solar cell layer transmission hole as perovskite materials applied in inversion, planar heterostructure p-NiO/CH3NH3PbI3/n-PCBM. Experimental results show that using sol-gel spin coating preparation of amorphous thin films of NiO and spin rate to 3000 rpm can be through the improvement of NiO thin film thickness, improve the absorbance of NiO thin film transmittance and calcium titanium ore, and the incorporation of 1.0at%at PVP content process parameters, the preparation of perovskite solar to battery PCE increased by 108%. Magnetron sputtering deposition of NiO thin films, sputtering power can cause the film to produce a crystal growth trend, making the film thickness increased by more than 10 times compared to the Sol-gel method, instead of reducing the battery's PCE.