Detection And Analysis Of Electroluminescence(EL)for Industrial Conventional Crystaline Silicon Solar Cells

At present,the global commercial production of cell component is still focused on silicon solar cell,but its absolute advantage still remains dominant position.With the rapid development of photovoltaic industry,the quality of the cell is increasingly high.But the defects in the cell,will not only lead to reduced cell efficiency,but also bring some hidden dangers to the quality of the cell.Electroluminescence(EL)detection technology emerged as a new cell quality testing.Therefore,the thesis,based on the industrialization of conventional monocrystalline silicon solar cells,studied the defects in the process of production by electroluminescence(EL)technology.To further explore the sources of these problems,to give a reasonable explanation and solutions,this article is essential for the company to improve the process,efficiency and stable production.The electroluminescence(EL)detection technology can not only identify the internal defects of the cell,but also can be accurately positioned,while the whole imaging process requires less than is.By detecting of defects in the position,size,shape and shading degree,this article used supplementary means including IV test,Four-point probe test,UV test,SEM test,Schimmel national standard method,Boiling method,EDS test,Metallurgical microscope,Ellipsometer to identify the source of the defects of the electrode fracture,the excessive etching,the hidden crack,the virtual print,the black spot and black stain,the scratch,the black cell and so on.Besides,it found that the composition ratio of Si,N and O in the frontal plate of PECVD significantly changed.Besides,in the whole range of wavelength 300-1100nm,the reflectivity is high.At the central wavelength of 650nm reached 10%,the short-circuit current was 9.221mA,lower than the normal cell.Then,through the means of data representation,theoretical analysis and process parameter adjustment,the ration of electrode fracture in the screen printing process of silicon cell was lowered from 0.748%to 0.573%.At the same time,it proved that the chamfering black cell is caused by the original silicon wafer,not by the company’s technology.As to the black frame,Belt marks and hidden crack detected by electroluminescence(EL)technology,the paper analyzes the cause and puts forward solutions.It reduced the occurrence of the above defects of B class and C class cell,and the improved the yield of the product line.