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Investigation On The PEDOT:PSS/Si Organic-inorganic Heterojunction Solar Cell Performance Improvement

Posted on:2018-10-26Degree:MasterType:Thesis
Country:ChinaCandidate:Y J ShenFull Text:PDF
GTID:2322330539485380Subject:Optical Engineering
Abstract/Summary:PDF Full Text Request
Organic-inorganic hybrid solar cells have recently been recognize to be one of potentially low-cost candidates for photovoltaic application,which avoid a high temperature diffusion or implantation process of traditional solar cells to reduce the cost.However,it is still a thorny problem that how to improve the conversion efficiency(PCE)of organic-inprganic hybrid solar cells.At present,the PCE of organic-inorganic hybrid solar cells are below 10% mostly by compared with the traditional crystalline silicon solar cell,which is absolute inferiority.In our work,both the surface's morphology and the emitter are optimized in order to improve the PCE of organic-inorganic hybrid solar cells..On case of PEDOT:PSS doped with DMSO or EG as the emitter,the PCE of solar cell increased from less than 1% to 4.8%;By means of adopting the pyramid structure of wafers,the device performance improved up to 10%,which lead to a basic PCE has been achieved.In addition,for a Si/PEDOT:PSS solar cell,a traditional ion implantation n+ back surface field or new type of Ge back material are inserted between the rear side of n-Si and Ag anode,leading to a band bending and resulting in the electrons could be effectively collected by Ag a minimized the total charge recombination.As a result,the open circuit voltage improved by nearly 20 mV and the PCE of 12.08% is achieved.Most important,we observe that PEDOT:PSS can serve as passivation material to suppression of minority carrier recombination at the silicon surface,A millisecond level minority carrier lifetime on a high resistivity Si wafer of 6.6ms has been obtained.In order to examine the application of the passivation scheme in real devices,we develop Si heterojunction solar cell with both sides are passivated with using polymer and without any other passivation materials and function materials on the normal Si wafer with a resistivity of 1–5 ??cm,the PCE is achieved to 12.22%.
Keywords/Search Tags:Si, PEDOT:PSS, doping, BSF, Surface passivation, Heterojunction
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