Perovskite Solar Cell Preparation Technology And Interface Modification Research

Faced with the increasingly serious energy shortage and environmental pollution,clean and pollution-free new energy development has become one of the major issues to solve the energy needs of today's society.The solar energy which is clean,safe,no pollution and huge reserves and many other advantages,has attracted many researchers' attention,the battery device developed has become one of the most important member of the electric energy.At present,the traditional crystal silicon battery device products have been achieved in the mass production,but the high price of raw materials for their products,is not conducive to the wide range of its applications.At this point,the relevant researchers have to gradually shift their attention to the excellent performance,low price of new battery devices.In recent years,organic inorganic hybrid perovskite materials were prepared based on solar cell devices,because of its rich source of raw materials,low production cost,various preparation process and high conversion efficiency etc.,and attracted many researchers' attention,and has been the development of a leap.In perovskite type battery device fabrication process,compared to other types of devices,plane type battery device with simple preparation process,low material price,the effect of photoelectric properties and other advantages,therefore,this type of battery device as the main research object of this paper,which uses MAPbI₃ as the device of the light absorbing layer material.Specific research contents are as follows:1?The MAPbI₃ light absorption layer of the perovskite type battery device has been prepared by respectively using two step solution spin coating method,two step of spin coating and impregnation method,dual source co evaporation method,gas was prepared by phase assisted solution method;the characteristics of the various components were analyzed and discussed,and the advantages and disadvantages of each process were discussed.2?The polar material with high boiling point two methyl sulfoxide?DMSO?was used to modify the battery anode interface structure,the change of transmittance,surface morphology and electrical conductivity of the anode interface layer of PEDOT:PSS thin film were studied by DMSO before and after optimization,and discuss the changing trend of the photoelectric properties of perovskite solar cells before and after the modification.There are the conclusion of the modified device can obtain better photoelectric properties.3?Because of the MAPbI₃ light absorption layer of the perovskite type battery device was sensitive to water vapor,oxygen,it will cause decomposition when it has been eroded by water vapor and oxygen erosion,which led to a decline in the performance of the device.In order to solve this problem,a BCP thin layer was used as the cathode interface modification layer of the device in the course of the experiment,on the one hand,it can reduce the recombination probability of electrons and holes in the cell and improve the photoelectric performance of the battery;on the other hand,it can enhance the capacity of the battery device to the water vapor barrier,reduce the light absorption layer of the perovskite type solar cell was damaged by the water vapor,increase the stability of the device.