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Preliminary Study Of Integrated Module Based On RSD Switch

Posted on:2016-04-22Degree:MasterType:Thesis
Country:ChinaCandidate:W G ChangFull Text:PDF
GTID:2348330479953195Subject:Software engineering
Abstract/Summary:
Pulsed power technology is a power conversion technology which compress the power in time, and features for high power, high current, high voltage and short pulse width. With the development of modern industry, especially the repetition frequency pulse power technology’s more and more applications in industry, semiconductor switches gradually replace the traditional switches in pulse power technology. Semiconductor integration can realize power system of high power density, high efficiency, high reliability and low cost, and it has become the important direction of pulse power technology.RSD(Reversely Switched Dynistor) is a new high-speed high-power semiconductor switching device; it adopts the principles of controllable plasma layer to turn on. The device has a small loss of flow area after the conduction, so it not only has high di/dt tolerance, but also can be turned on with large current in a short time. It has good voltage sharing characteristics and easier to be connected in series. RSD device is more suitable for application in the field of pulsed power technology compared with traditional thyristor devices.First of all, this paper is based on pulse circuit taking RSD, consists of a module by integrated circuit. Establishing a three dimensional model of module, and calculating the internal stray inductance value through the finite element simulation software, analyzing and studying the module internal inductance distribution of the various components. Import calculated stray parameters of the module to the circuit model, and analyze the influence of internal circuit parameters module is analyzed for the amount of output current di/dt by the circuit simulation software.This paper has carried on the experimental study also, made of the same structure module and discharge experiments according to the established 3d model,and the experiment achieved the desired effect by simulation. The experiment obtained a 8.85 kA/μs current rising rate under 1500 V, pulse width 1μs. The results provide a reference basis for a higher level of integration.
Keywords/Search Tags:Reversely Switched Dynistor(RSD), pulsed power technology, integrated module, high di/dt, finite element
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