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Design Of RF Power Amplifier

Posted on:2015-08-21Degree:MasterType:Thesis
Country:ChinaCandidate:Y Y LiFull Text:PDF
GTID:2348330485993816Subject:Microelectronics and Solid State Electronics
Abstract/Summary:
In recent years, the rapid development of wireless communication industry,mobile phones, Bluetooth and wireless LAN products greatly enrich people’s lives.With the increasing performance requirements of wireless communication devices,radio frequency technology in recent years has been rapid developed. But the limited spectrum resources bring tremendous challenge to the design of RF module, so we must adopt more complex modulation techniques. As the core modules of RF transceiver, power amplifier(PA) has been a research focus. The design of a high-performance PA has great significance for the development of wireless communications.In this paper, the historical development trend and technical difficulties of wireless communication was briefly discussed, and research progress of the PA was surveyed. As the maximum power consumption module, PA’s efficiency decides the cruising ability of equipment, especially for mobile devices. Some modulation techniques require good linearity, so the designers have to make a trade-off between PA ’s efficiency and linearity. Firstly, this paper designed a linear PA applied to WLAN(2.4 GHz). Under the condition of 3.3V supply, the output power of the PA is23 dBm, the gain is more than 20 dB, and the PA is unconditionally stable in the whole band. Furthermore, we designed the Class AB PA apply to the X-band(8.0 ~ 12.0GHz) in UMC 0.18μm CMOS process and IBM 0.18μm SiGe BiCMOS7 WL process,respectively. Then we completed the layout design, post-simulation and tape out of the PAs. This paper gives the test and simulation results of these Pas. Under the condition of 3.3V supply, the output power of the PA is 12 dBm, the gain is more than20 dB. At last, we have reached some conclusion. If the adaptive biasing techniques are adopted in the SiGe process, it will improve linearity and efficiency of the PAs.Moreover, the SiGe HBT power transistor has better frequency characteristics and high power output capability.
Keywords/Search Tags:WLAN, power amplifier, X-band, CMOS Process, SiGe Process
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