Research On New Type Of SOI-LDMOS High Voltage Power Debice Structure Used In Buck Circuit Of Switching Power

With rapid development of social economy,led to the development of variety high-voltage power devices,Simultaneously,demands of switching power supply is increasing.A new generation of high power semiconductor devices-Silicon on insulator,its Lateral Double diffused metal-oxide field effect transistor(SOI-LDMOS),is the core of the high-voltage power integrated circuits.This study is based on high-voltage power integrated circuit(HVIC),Introduced power devices and integrated circuits.Respectively,from the device structure and Switching Power application two directions conduct research and analyze,to achieve the organic integration of power devices and integrated circuits.(1)The device structure aspects.Introduced the structure features of SOI-LDMOS devices,based ENDIF(ENhanced DIelectric layer Field)theory proposed triangular groove SOI-LDMOS device new structure,followed,analysis the mechanism of the device breakdown voltage,and use two-dimensional simulation software MEDICI to conduct static,dynamic performance simulation,through compared with simulation results of conventional SOI-LDMOS structure,to highlight the advantages of the new structure in breakdown voltage,temperature characteristics,switching characteristics.Finally,by large number of simulation analysis,get SOI-LDMOS device New structure which has been optimizied parameters.(2)The switching power supply applications aspects.First introduced the practical application area of switching power supply,working principle,performance of switching power supply;Then analysis focuses on Buck circuit of switching power converters,analysis Buck circuit works and select basis of elements.Finally,extract two kinds of SOI-LDMOS devices PSPICE simulation structure model,under Cadence environment,use PSPICE circuit simulation tools to simulate Buck circuit,to achieve switching power DC-DC Buck transform.Under the conditions of the circuit to achieve the same functionality,use SOI-LDMOS and triangular groove SOI-LDMOS as switching elements,by the simulation results,compare voltage,current and power output Circumstances of both,highlight triangular groove SOI-LDMOS device new structure performance advantages.