The Research Of ESD Protection Network Model For Single Chip Intelligent Power Module

Recently, single chip intelligent power module (IPM) has been widely used in domestic appliances, new energy vehicles due to its high integration, high robust and low cost. Owing to the high integration and compact pin, Single chip intelligent power module suffers great threat from electro-static discharge (ESD). Thus, it requires a complex ESD protection network to provide protection for each pin of the module. Model is the bridge linking the device and the circuit design, it can effectively simplify circuit design and improve design success rate. Therefor, the research on the modeling of ESD protection network of single chip intelligent power module is of great significance.In this thesis, a complete model of ESD protection network about single chip intelligent power module is developed which includes the models of low-voltage input network and high-voltage output network. The low-voltage network model is mainly focused on low-voltage diode, which is built by considering of the series resistance effect and avalanche breakdown effect based on the current equation of the ideal diode. Then, analyzing the device’s mechanism about secondary breakdown, a simulation method on secondary breakdown is given. The high-voltage network model mainly includes SOI-FRD model and SOI-LIGBT model, the SOI-FRD model uses the same idea of low-voltage diode modeling. Based on the analysis of ESD response mechanism about SOI-LIGBT, the SOI-LIGBT model is proposed by dividing its ESD response characteristics into four stages: forward blocking region, voltage snapback region, voltage holding region and secondary breakdown region. The behavioral models in different stages have been established by using mathematical method. Finally, a complete model of ESD protection network of single chip intelligent power module is established by considering the parasitic resistance effect of metal wire.Eventually, by adopting circuit level simulation software, the accuracy of the presented model of ESD protection network has been verified. The validation results show that the model error is less than 5%, which meets the expected goal.