Fabrication Of P-type Transparent,Highly Conducting?CuS?_x:?ZnS?_1-x Nanocomposite Thin Films And ZnO Heterojunction Photoelectric Device

This paper were using liquid reaction method successfully fabricated?CuS?_x:?ZnS?_1-x solution,and using chemical bath deposition method based on ITO glass substrate fabricated?CuS?_x:?ZnS?_1-x thin film.In order to reslize the morphology,structure and transmittance of the thin film,we can use the scanning electron microscope,X-ray scatterings and visible photometer to detect the thin film samples.Through the hydrothermal method,the ZnO nanowires grow based on p-type?CuS?_x:?ZnS?_1-x thin film,then we achieved the heterojunction photoelectric device.It summarized as follows:Polymeric pecursor solution?CuS?_x:?ZnS?_1-x solution belongs to p conduction type,using chemical bath deposition method based on ITO glass substrate fabricated?CuS?_x:?ZnS?_1-x thin film.The transmittance of the thin film is depend on the size of the nanometer grain,so we can adjust the size of the nanometer grain in the thin film through change the concentration of Cu,the best transmittance of the thin film can up to 70% in the visible spectrum.In this?CuS?_x:?ZnS?_1-x thin film with different x,we can achieve the best transmittance when,the concentration of Cu,x=0.65.The?CuS?_0.65:?ZnS?_0.35 thin film is also the most homogeneous and compact.Therefore we choose the?CuS?_0.65:?ZnS?_0.35 thin film as the substrate,the ZnO nanowires grow on it through the hydrothermal method.We detect the ZnO heterojunction photoelectric device for the electrical property,then we get the graph of the I-V character.It is observed that p-type transparent conducting thin film constitute heterojunction with ZnO.It means that p-type transparent conducting thin film worths further research.We can give more attention to it,lay a theoretical foundation for the subsequent application in the further research.