| The popularity of electric vehicles has promoted the study of the charging pile. As the core device of inverter module in the charging pile, IGBT becomes more and more important, and the performance parameters of IGBT are getting higher and higher. With the characteristic of high voltage、high current、low power consumption and fast switching speed, the corresponding process requirements and design is very difficult. This paper aims to design a 1200V/100A Trench-FS IGBT, which is suitable for the inverter module,and it has a certain guiding for the future development. The prime contents of this paper are including:1、According to the current domestic situation to develop a Trench-FS IGBT process flow. Firstly, the traditional Trench-FS IGBT is simulated, including the parameters of epitaxial layer、Pbody region、back P+&FS layer and Trench gate. then getting the Electrical parameters of BV, Vth, VCE, Ciss, Cres, Tf and Eoff of the traditional Trench-FS IGBT. But it has a shortcoming that Ciss value is too big.2、Based on the traditional structural simulation, four Trench-FS IGBTs with Dummy structure are proposed to try to optimize the Ciss value. Finally, a Trench-FS IGBT with floating P region is determined to meet the corresponding design index. On the basis of this structure, the terminal design is completed. The terminal adopts the composite structure of the field ring and field plate to obtain the optimal terminal structure.Finally, the L-edit software is used to draw the layout of the device for future Tapeout demand.3、The theory of inverter module and charging module is introduced, and the specific indexes that IGBT need to be meet when it’s applied. It is clarified that the design of 1200V/100A Trench-FS IGBT is in keeping with the corresponding requirements. It makes this paper more complete.The basic parameters of the device: B V = 1398V, forward voltage drop VCE = 1.65 V,threshold voltage Vth = 5.5 V, Ciss = 8967pF, Cres = 270pF, turn-off time Tf = 37ns, turn-off loss Eoff=5.1mJ. |
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