Research And Design Of Surface Plasmon Polaritons Transmission Line And On-chip Inductor

The potential applications of surface plasmon polaritons (SPPs) in electronics and photonics have received considerable attention. In the millimeter wave / terahertz (THz) frequency band, the SPPs waveguide in the silicon base craft shows low loss performance. The SPPs waveguide can propagate strongly confined TM mode surface waves by carving grooves in the metal band. In addition, the on-chip spiral inductor with its superior performance, is widely used in all aspects of the RF field. As the chip space, circuit design factors, the spacing between adjacent inductors is getting smaller and smaller. Therefore, we can not ignore the coupling effect between adjacent inductance pairs in our study. In this paper, the following research and design work is carried out for the silicon-based transmission line and inductor.Firstly, three kinds of transmission lines (microstrip line MS, CPW and standard ground coplanar waveguide GCPW ) are analyzed based on 0.13um CMOS technology. The relationship between the structure and loss of the transmission line is studied from the field distribution diagram.Based on the S parameter, the parameters such as characteristic impedance, phase constant and decay constant of the transmission line are extracted. At the same time, artificial neural network model (ANN) was used to model the transmission line. Compared with the ANN model and the results of the test, the model validates the performance of the transmission line, and also analyzes the three kinds of structures separately.Secondly, by analyzing the periodic groove structure of the spoof SPPs transmission line, the influence of the structure size on the asymptotic frequency is obtained.We can achieve the progressive frequency of the sSPP in the lower frequency band ,and also a better propagation length. A novel transmission line of the spoof surface plasmon structure (sSPP) under the BiCMOS process is designed and processed. The mode converter achieves low loss conversion from TEM mode to TM mode. The results of processing tests show that the structure can achieve low and flat loss characteristics in the millimeter wave /terahertz high frequency band (220-320GHz).In addition, two kinds equivalent circuit model of of inductors is studied and verified: the π model of single inductor and the equivalent model of adjacent inductor pair. The two kinds of inductor equivalent circuit models and parameter extraction method are analyzed and deduced. Two spiral on-chip inductor structures based on a 0.13μm CMOS process were tested: separate inductors and adjacent inductor pairs . Compared with the EM simulation results, the inductor value, the Q factor and the S parameter of the model have good consistency in the frequency range of 10M-110GHz, which verifies the model’s accuracy.