A Research Of Total Dose Effect Of DSP With Circuit-level Simulation

In recent years,the rapid development of the space industry drives higher requirements of radiation-resistant for the electronics.DSP(Digital Signal Proccessing)is playing an increasingly important role in the field of space optical communication and other aerospace.Space radiation environment is an important factor which hamper steady work of large scale integrated circuit on-orbit.Among them,the total dose effect(TID)is a cumulative result of device that in the radiation environment for a long time.TID shows the degradation of parameters and functional of the device,or even failure.These effects are largely determining the working life of the device.In this paper,some reseraches about TID of commercial DSP are done with modeling and simulation systematically.The research embarks from the microscopic damage mechanism of the device,and then simulate and upward analyze step by step,data of circuit level is obtained in the end.Thus,the radiation resistance of whole device can be evaluated.In this paper,some work is done.The damage mechanism of the integrated circuit in deep submicron process is analysed,and then the total dose effect of MOSFET is simulated using TCAD tools.By adopting the idea of separation of transistor,The I-V characteristic curve of parasitic transistor is separated from simulation result with the method of data-fitting.According to the radiation theory and the unit parasitic transistor superposition theory,parasitic transistor model can be derived.Hence,the total dose effect model for n-groove MOSFET is obtained.And then,single-transistor radiation model is integrated into the simulator.Based on the Hspice software,the operating characteristic of several sensitive unit circuits in DSP are simulated,including the CMOS inverter,the CMOS transmission gate,the SRAM storage unit,the 1-bit full adder,and the circuit of trigger,and some qualitative and quantitative analysis are showed for simulation results.Based on the simulation results of each part,the overall failure dose node of the commercial DSP is deduced and the rationality of the simulation results is verified by the relevant experimental data.In this paper,the total dose effect of DSP is studied from the perspective of circuit-level simulation.And the research method has good applicability,which can provide guidance and reference for future radiation experiment of other devices.