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Research And Design Of EEPROM For Pressure Sensor

Posted on:2018-12-27Degree:MasterType:Thesis
Country:ChinaCandidate:C W HanFull Text:PDF
GTID:2348330542956597Subject:Electronic and communication engineering
Abstract/Summary:PDF Full Text Request
With the rapid rise of integrated circuits in the 21st century,all kinds of electronic products began to get into people’s daily life,the widely used memory in the integrated circuit is also showing a diversified development trend.Memory is a device that can store data and programs,which is essential in many electronic products,and it’s even called the pillar product in the integrated circuit market.Nonvolatile memory,as the largest variety of memory,occupies a dominant position throughout the memory industry.Nowadays the most widely used memory is the electrically erasable programmable read-only memory EEPROM and the flash memory Flash.The EEPROM has a small capacity,but it can perform small-scale erase operation,its power consumption is also low,the Flash’s storage capacity is larger,but it only performs block-erase operation,with higher integration.For the memory used in the design of the pressure sensor,because the required storage space is not large,which is stored the pressure sensor configuration and tuning parameters,this article will choose the EEPROM as the more suitable memory.In this paper,an EEPROM chip for pressure sensor is designed with CSMC 0.35μm CMOS.Its storage capacity is 128bit,the supply voltage is 3.3V,and the clock frequency is 512kHz.According to the analog circuit module in the EEPROM,this paper mainly completed the design of the storage array,the boost circuit and the voltage switching circuit.Through the improvement of the structure of the sensitive amplifier,a new type of sensitive amplifier is proposed,which has faster reading speed,lower power consumption and simpler structure.At the same time,the design and simulation of digital circuits such as decoder circuit,register circuit and timing control circuit are completed,and the I/O interface circuit is improved to ensure the stability of its output and input.At last,this paper also optimizes the read power consumption,erase power consumption and static power consumption of the chip,completes the limit process simulation of several main modules.The simulation results of the three operating modes of the whole chip meet the expected target,and the performance parameters also meet the requirements of the design.
Keywords/Search Tags:nonvolatile memory, EEPROM, charge pump, sensitive amplifier
PDF Full Text Request
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