Research And Application Of Four Noise Parameter Model Of Millimeter Wave Transistor

With the development of down-scaling of CMOS technology for low power,mixed-signal,and high frequency applications,the optimal high frequency performance is shifted from moderate toward weak inversion regimes.Small-signal equivalent circuit model and parameter extraction method is a prerequisite for designing the radio frequency and millimeter-wave circuits,and is essential for the noise analysis of nanoscale metal-oxide-semiconductor field-effect transistors(MOSFETs).Although many efforts have been put into characterization and modeling of RF MOS transistor,but the high performance and the equivalent circuit over most of the literature focus on the strong anti zone modeling.In this paper,the present mature technology is used to analyze the noise parameters of the MOSFET small signal equivalent circuit model and the noise model.In the different inverse regions,the analytic expression of the noise parameter model is obtained by using the noise synthesis step by step through the port network noise theory.First,the small signal equivalent circuit model and parameter extraction technology are prerequisites for millimeter wave circuit design.It is the basis for understanding the physical mechanism of nano scale metal oxide semiconductor field effect transistor(MOSFET)and establishing the nonlinear equivalent circuit model.This paper studies the simple method of nano MOSFET in the small signal equivalent circuit model and the component parameters of millimeter wave extraction;noise and the small signal equivalent circuit model is analyzed and studied according to the equivalent circuit model of the noise,four methods of noise parameter inversion of regional port network noise theory of strong inversion region and based on the analysis,according to the changes of different types of regional anti noise mechanism,the final four noise parameters of analytical expressions of three different inversion region is obtained.In this paper,through the analysis of 130 nm MOSFET equivalent circuit model,parameter extraction to establish the equivalent circuit model of value;and use the extracted element value analysis of anti noise in four regions of the model results,compared with the four noise parameters of reference,to verifythe feasibility of the method and model of the inverse process of the final implementation;four noise parameters are obtained,the noise mechanism of weak inversion region,and the value of comparative analysis in the literature,to prove the value of application of four noise parameters are given in this paper.