Study Of High Speed Lateral IGBT With Enhanced Mass Plasma Injection Effect

Power Semiconductor Device,which is one of the core devices in power electronics Systems,transfers and controls the electric energy.As a popular power semiconductor device,Insulated Gate Bipolar Transistor(IGBT)combining the character of gating voltage control of MOSFET and the low on-resistance of BJT,is widely used in all kinds of power electronics system which has the advances of voltage control,high input impedance,low on-resistance,low driving power dissipation and so on.The vertical IGBT can be fabricated as discrete devices,so it is widely used in the high-power condition for its high breakdown voltage.The lateral IGBT is compatible with the conditional CMOS process,and can be integrated to silicon-based and SOI-based(Silicon-On-Insulator-based),so is one of core devices in power intergrated circuit.As a dual-carrier power device,IGBT has good on-state performance with high current density and low on-resistance,but because of the undesired long tail current caused by non-equilibrium carriers storage effect,it suffers from a slow switching speed.This increases its switching dissipation and limits its application range.With Lateral IGBT as the object of study,aiming at the constraint relation between Von and Toff,the following simulations and optimizations are done according to the structure and working principle of IGBT:1.Analyze and simulate the Dual-Gate device DG-ILET,verify the method of suppressing NDR(Negative Differential Resistance),and optimize the device performance by controlling the voltage values of gates.2.Proposing a novel Dual-Gate Lateral IGBT on SOI substrate with polysilicon filed plate: with the introduction of a high-permittivity material(HK)into it,an electric field from the P+ religion in the anode to the polysilicon layer is generated,which amplifies the conductivity modulation effect;Using the polysilicon filed plate to control the flow of holes and optimize the switching performance;adjusting the doping concentration of the polysilicon and the position of the PN junction to optimize the forward breakdown voltage.The relationships among breakdown voltage and the polysilicon doping concentration and the position of the PN junction,the relationships among on-state current density and the concentration of the n-buffer region and the anode P+ region and the dielectric permittivity and thickness,and the relationships among the switching performance and the anode P+ region and the dielectric permittivity and thickness have been researched in detail.The simulation results show that this novel device can greatly amplify the on-state current density,simultaneously reduce the turn-off time and the dissipation.3.With the help of EDA tool Tsuprem4 and Medici,the process parameters and the designed device are simulated.