| Global photovoltaic power generation increased nearly thirty times, and the average annual growth rate is more than 40% in the past decade. And copper indium gallium selenide(CIGS) thin-film solar cell efficiency has reached 21.7% in the end of 2015. CIGS thin film solar cells on flexible substrates will become the mainstream of the future direction of development of CIGS thin film solar cell, because the flexible substrate of CIGS thin film solar cell is very conducive to the roll to roll(roll-to-roll) industrial mass production, and convenient for transportation. Pulsed laser deposition(PLD) is a kind of methods of can be achieved in efficient preparation CIGS thin film on flexible substrate, at the same time PLD in keeping the multielement compound ratio of element has a unique advantage. The annealing of flexible substrate films materials become difficult to deal with, but also one of the rough problem need to be solved in thin film deposition caused by pulsed laser deposition. This paper tries to use photothermal annealing and shadow mask pulsed laser deposition to solve the difficulties., and this paper is mainly divided into three parts, the specific contents are as follows:The first part mainly contrast the recrystallization of the thin film in different annealing method on the flexible substrate polyimide(PI) under temperature tolerance range(400 ?). Study found that: 1) when using pulsed laser annealing on, large particles significantly reduce the film surface, at the same time as the laser wavelength change also have different annealing performance. When using 1604 nm wavelength annealing,thin film surface present a larger surface area of the burr. When using 532 nm and 355 nm annealing thin film surface present a small range of smooth surface. But crystallization rate was no significant change. 2)When using 400 ? annealing, larger particles of the surface of thin film have no obvious change, small size particles disappear, present the smooth but not flat, film crystallization rate increased significantly at the same time. 3) The surface of the film roughness is greatly reduced and the crystallization rate is highest when using the laser and 400 degree annealing.The second part explore parameter of the efficient preparation of thin film by shadow mask pulsed laser deposition(SMPLD), at the same time CIGS thin film made by SMPLD and CIGS thin film produced by PLD were compared. Study found that: 1) The preparation efficiency of CIGS smooth film is related to the distance between the substrate and the baffle, the efficiency of film preparation increased with the increase of distance in the range of distance, but when the distance increases to a specific value, the area of the smooth film decreases with the value increases. 2) The preparation efficiency of CIGS smooth film is closely related to the buffer pressure, the air pressure is too low to reduce the efficiency, too high to decreased significantly. 3) The thickness of CIGS smooth film is proportional to the deposition time and positive correlation with single pulsed laser energy. Comparison results show that, the highest efficiency of SMPLD method was close to 32% of PLD, while the surface roughness decreased by two orders of magnitude, and the crystallization rate increased significantly.The last part, we uses the ordinary PLD method for the preparation of molybdenum(Mo) electrode layer, and the preparation of CIGS solar cell, cadmium sulfide(Cd S) buffer layer and window layer of Zn O and Al:Zn O films with the method of SMPLD based on the content of the second part. Section SEM and XRD characterization results show that the SMPLD preparation of each layer was separated, the CIGS layer film close to crystal growth. Mo layer showed a columnar crystal growth. The battery efficiency characterized results as follows: open circuit voltage is 600 m V, the short-circuit current is 11.86 m A/cm2, a fill factor is 0.431, the photoelectric conversion efficiency is 3.03%. |
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