| Recently,new organic/inorganic hybrid materials have attracted lots of attention due to their novel optoelectronic properties,which have potential applications in solar cells and photo detectors.Specially,with the deeper understanding of characteristic of perovskite,the power efficiency of the solar cells based on perovskite films rapidly increased from 3.8% to 22.1% in few years.What’s more,they have been explored in optoelectronic devices,such as photo detectors,photo field effect transistors and so on.Here,we discuss about the application of organic/inorganic perovskite in optoelectronic devices based on different device configuration with various fabrication methods.The main works of this thesis are demonstrated as below:1.We explored the simple method to fabricate the high quality perovskite films in atmosphere.The performance of the perovskite solar cells were greatly improved by using our simple fabrication method.The films are not compacted owing to the holes between the crystals in the perovskite films fabricated in air.We use MAI solution method to improve the quality of the films.We found that the long carrier lifetime,low density of defects and high recombined resistance in the films are the key factors to get high efficiency solar cells.This finding provides new fabrication method of high performance perovskite solar cells.2.We fabricated photo detectors based on the perovskite films and small organic molecules C8 BTBT,which has high mobility in organic semiconductors.Due to the instability of organic molecules,the MAI and PbI2 were simultaneously vacuum deposited on the previously fabricated C8 BTBT field effect transistors to get perovskite films.Such organic/inorganic hybrid devices showed excellent optoelectronic performance.The mobility is more than 5 cm2V-1s-1,and the photo responsibility is 30A/W with 0.1s response time at the light of 473 nm.This is the best one of organic photo detectors,which is even equal to the performance of the inorganic ones.We discussed the carrier transport in such device configuration by temperature experiment.3.We improved the performance of MoS2 photo detectors by depositing perovskite films on MoS2.Two dimensional materials（TDM）have been widely studied since they have novel optoelectronic properties.However,the absorption efficiency of TDM is extensively low because they are too thin.While,by taking the advantage of the high absorption efficiency of the perovskite films,we got high performance Mo S2 photo detectors by depositing perovskite films on MoS2 field effect transistors.The perovskite films were fabricated by CVD method based on firstly vacuum deposited PbI2 on MoS2.The photo responsibility is 104A/W with 40 ms response time.Such high performance is because that the perovskite films increase the density of the photon-generated carriers and the more carriers are injected into the channel of MoS2 field effect transistors.These findings give a new route to improve the photo detectors. |
