Structure Design And Fabrication Of 850nm Superluminescent Diode

Superluminescent emitting diode has excellent luminous property which is different from laser diode and lighting emitting diode.A three-quantum-well structure with nonuniform well width at active region of epitaxial wafer and a large asymmetric-waveguide structure at waveguide region are designed to improve the spectrum width and output power of superluminescent diode.In the aspect of device structure,a new device structure is proposed by using gain-clamped theory,and a multi-wavelength gain clamping system is designed.In the aspect of device preparation,the antireflection coating is evaporated on the front and rear surface of the device,the inclined bar structure with spot-size converter is used in the ridge area,the nanoimprint technology is used to prepare a nanorod for multi-wavelength surface distributed feedback clamping system on device ridge mesa.The length of pumping region in the fabricated device is 800 μm,the length of absorption region is 1 000 μm,and the width of mesa with angle 6° is 5 μm.When the working current is 160 mA,the continuous output power of at room temperature is 14.63 mW,the central wavelength of 846.05 nm,and the full-width at half maximum of 23.92 nm.The new structure design can be used to gain the non-central wavelength of device,suppress the F-P oscillation of central wavelength,and realize the gain clamping of central wavelength.