Simulation Analysis Of GaN DFB Semiconductor Laser Based On Reconstruction Equivalent Chirp Technique

GaN based ?-? nitrides,as a kind of wide bandgap semiconductor materials,have great application prospect and huge market demand in optoelectronic devices.It is also a hot topic in the field of optoelectronic materials in recent years.With the rapid development of photoelectric component,the research and development goals of semiconductor laser are reducing production costs,miniaturized devices,low energy and high power output.The point of this paper is the reconstruction equivalent chirp technique.GaN based DFB semiconductor laser based on REC technology were simulated through coupled mode theory and transfer matrix method.The possibility of REC technique being applied to GaN based laser was verified.On this basis,the designed laser in this paper was improved.It is found that the output power will decrease with the increase of cavity length and the optical field distribution become non-uniform which will make the spatial hole burning effect worse.The active layer thickness has a best value,in this case the laser has the highest output power.The structure of phase-shifted,asymmetric phase-shifted and multi exposure technology were simulated.These three technologies can improve the output power.But the spatial hole burning effect is also a problem.In order to improving the effect of spatial hole,the structure of three phase-shifted,corrugation pitch modulated and a new kind of grating were simulated.It is found that these three structure can make the optical field distribution in the cavity become smooth.These results provide a reference for the application of this technology on gallium nitride lasers.