Research On Multi-physics And High-efficiency Parallel Simulation Method Based On Time-Domain Finite Element Method For Integrated Structure

In recent years,with the rapid development of wireless communication technology and people's demand for portable and high-performance electronic devices,the R&D and design of electronic products has been devoted to miniaturization and function diversification.The integrated density of electronic products is getting higher and higher.However,due to the small size and poor heat dissipation of the high-density integrated structure,there is a strong self-heating effect during device operation,which may degrade the performance of the device.Therefore,it is difficult to accurately estimate the performance of the integrated device by analyzing only a single physical field,and multi-physics analysis must be used.In addition,due to the large scale of the problem solved by the multi-physics analysis of the integrated structure and the long solution time,it is necessary to adapt parallel computing method.In this thesis,the electromagnetic-thermal coupling algorithm in passive integrated structure and the electro-ion concentration-thermal coupling algorithm in passive integrated structure are proposed based on the finite element method.The algorithm is implemented on the high performance parallel computing platform(JAUMIN),so that the algorithm can solve multiple physical problems in large-scale integration structures in parallel.In the simulation of the passive integrated structure,the electromagnetic-thermal effect of the passive integrated filter is first studied,and the influence of the self-heating effect on the S-parameter of the device is described.Subsequently,the influence of chip heating on the characteristics of the passive filter in the system package is studied.In the simulation of the active integrated structure,this thesis describes in detail the resistance change phenomenon of the resistive random access memory(RRAM).The physical phenomenon is the result of the three physical processes of continuous current distribution,heat conduction and ion migration.In the thesis,the influence of different factors on the resistive switching characteristics of RRAM is systematically studied,and the thermal crosstalk effect of a 3D array of 1D1R resistive memory is simulated.