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A Research Of Preparation And Luminescence Properties Of MoS2 Thin Films

Posted on:2020-05-18Degree:MasterType:Thesis
Country:ChinaCandidate:C ChenFull Text:PDF
GTID:2370330596475005Subject:Optical Engineering
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In recent years,graphene has attracted more attention than traditional three-dimensional materials due to its excellent electrical,optical and heat conduction properties.People try to explore more similar two-dimensional materials,boron nitride?BN?,molybdenum disulfide?MoS2?and other have entered people's vision.MoS2 is a typical two-dimensional material in two-dimensional transition metal sulfide.Because of its band gap width,it has good absorption in visible light band,so MoS2 has a good application prospect in new optoelectronic devices.However,due to a large number of defects in MoS2,the low absorption and low luminous efficiency of MoS2 restrict the further development of MoS2 in optoelectronic devices.On the basis of optimizing the preparation process of MoS2 thin film,this paper studied the influence mechanism of three processing processes on the photoluminescence?PL?performance of MoS2 thin film.The main work is as follows:In this paper,MoS2 thin films were prepared by hot steam vulcanization?TVS?method.The results were as follows:the MoS2 thin film prepared in this experiment presented a mixed structure with horizontal and vertical arrangement.The typical Raman vibration mode is shown in Mo film with different thickness corresponding to MoS2 film.The MoS2 thin film has the PL spectrum characteristics of direct band gap and indirect band gap.PL based on membrane performance,get the best temperature vulcanization process for the preparation of 550?.The MoS2 films prepared on SiO2/Si and quartz glass substrates have similar structure and PL properties.In order to improve the PL performance of MoS2,the effects of Pt nanoparticle modification,Co doping and organic acid treatment on the luminous performance of MoS2 were studied.The Pt nanoparticles deposited on the MoS2 surface by magnetron sputtering process can remarkably improve the optical absorption of MoS2 and the PL performance of MoS2.The direct band gap luminescence of MoS2 thin film was increased by 10.4 times,and the indirect band gap luminescence was increased by 15.6 times.The results showed that the Pt nanoparticles on MoS2 surface enhanced the wide spectrum absorption of the thin film in the visible light range due to the surface plasmon resonance effect,thus improving its PL performance.At the same time,the mixed structure MoS2,which is composed of both vertical and horizontal arrays,has the characteristic of excitation wavelength dependence of PL spectrum,which makes it have a good application prospect in the field of biomarkers.Secondly,it is also found in this paper that the organic acid TFSI treatment method also has a good effect on improving the PL performance of the composite structure MoS2 thin film,while the doped Co has a certain inhibitory effect on the PL performance of the composite structure MoS2 thin film.In this paper,the preparation process of MoS2 thin film was optimized and the photoluminescence performance of MoS2 was improved.A large area continuous MoS2thin film was successfully prepared,and the Pt nanoparticle modified MoS2 thin film PL was improved for the first time.The results are valuable for the development of MoS2 thin-film-based optoelectronic devices.
Keywords/Search Tags:MoS2, CVD, photoluminescence, LSPR
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