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Study Of Photoluminescence Properties Of CuInS2 And Other Group ?-?-? Nanocrystals

Posted on:2019-11-15Degree:MasterType:Thesis
Country:ChinaCandidate:Q Q WangFull Text:PDF
GTID:2370330596960928Subject:Condensed matter physics
Abstract/Summary:PDF Full Text Request
There are many reports on the synthesis of ternary chalcopyrite semiconductor?such as CuInS2 and CuInSe2?nanocrystals.Group I-III-VI alloyed semiconductors have applications in solar cells,in vivo bioimaging,and display devices.CuInS2?CuInSe2?is a semiconductor with direct bandgap of 1.5 eV?1.04 eV?,corresponding to light emission at 827 nm?1192nm?;it does not contain highly toxic heavy-metal elements.It has large optical absorption coefficient(?>105 cm-1)and high photostability.The photoluminescence intensity of the CuInS2 quantum dots?QDs?can be dramatically improved after surface coating with ZnS.The photoluminescence mechanisms of the group I-III-VI alloyed semiconductors are still under debate owing to complexity of their structures.We focus on study of the chalcopyrite-type CuInS2 and CuInSe2 QDs.We study the synthesis of these QDs and their photoluminescence properties in the visible region as well as self-assembly of the CuInSe2QDs into superlattices.We synthesize two kinds of CuInS2-based QDs by using different solvothermal methods.One type of the CuInS2-based QDs are synthesized by employing different Cu/In molar ratios?3/2,1/1,and 1/2?.The bandgap of the synthesized CuInS2 QDS depends on the Cu/In ratio,the photoluminescence of the CuInS2 QDs shifts to bule with increasing Cu deficiency.The luminescence lies in the red spectral region?650–720 nm?,and the luminescence intensity is relatively small.The luminescence originates from the donor–acceptor pair recombination,where InCu?In substitutes for Cu?or VS?S vacancy?may act as the donor state and VCu?Cu vacancy?may act as the acceptor state.The absorption peak of the CuInS2/ZnS QDs shifts to blue relative to that of the original CuInS2 QDs,and their luminescence shifts to blue too,showing tunable emission wavelength.The surface passivation of the CuInS2 QDs with the ZnS layers results in dramaticly increased luminescence intensity.Another type of CuInS2QDs exhibit an exciton absorption?520 nm?in the absorption spectrum at room temperature,and their luminescence lies in the red spectral region?around 640 nm?.After coating ZnS on the surfaces of the CuInS2 QDs,the exciton absorption peak disappears,and the the luminescence with double emission bands exhibits abnormal blue shift.These results show that there are cation exchange between CuInS2 and ZnS,and the 555 nm emission originates from the Cu?Zn?InS2 core and the 605 nm emission originates from the ZnS shell.After the Cu?Zn?InS2/ZnS QDs experience surface treatment with acid,the luminescence from the ZnS shell diminishes dramatically.The CuInSe2 QDs with an average size ranging from 2.23 to 5.25 nm are synthesized by using the solvothermal method.They have size-dependent photoluminescence ranging from660 to 680 nm,and the emission is defect related.We also observe self-assembly of the CuInSe2 QDs into superlattices,and the superlattices have 2H structure.The reflection spectrum varies with the thickness of the CuInSe2 QD layer.These studies could help to drive the research and development of the devices based on the quantum dot superlattices.
Keywords/Search Tags:CuInS2, luminescence mechanism, quantum dot, core/shell structure, superlattice
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