Characterization Of Ion-doped Optical Crystals

TeO₂ crystal is a promising material for numerous potential applications in optical amplifiers and optical switches,owing to the good birefringence performance and high acoustic-optical threshold.Nd:YLF crystal is a outstanding laser material for numerous technological applications in optoelectronics,due to large fluorescence line width and low laser threshold.Among the laser host material families,YbVO₄ has received significant attentions for potential applications in solid-state lasers owing to its excellent features,such as low lasing threshold and high slope efficiency.In this work,the electronic structure and optical properties of carbon?C?replaced tellurium?Te?doped?:TeO₂ systems are calculated by using CASTEP module.Microstructure and optical properties of unit cell and C-doped supercells are calculated and analyzed.The results of microstructure show that,after doping,the conduction band of the system moves to the bottom,which causes the bandwidth decrease.Studies on optical properties show that,after doping,the properties of absorption and reflection change significantly,and the energy loss peak decreases and the energy loss peak has a red shift.The structural,optical and spectral properties of C implanted TeO₂ crystal,Si implanted Nd:YLF crystal and C/Er co-implanted crystal are investigated bying applying ion implantation technology combined with Raman spectra?Raman?,SRIM simulation,prism-coupling method,reflectivity calculated method?RCM?,and photoluminescence?PL?measurements.Relevant research contents are as follows:TeO₂ crystal is implanted with 6.0 MeV C at the dose of 4.5×10¹⁴ cm^-2.The dark model results show that several sharp barrier guiding wave patterns are formed.The corresponding fitting results indicate that,transverse electric?TE?and transverse magnetic?TM?guiding modes are well confined in the waveguide region.Nd:YLF is implanted with 4.5 MeV Si ions at the dose of 1.0×10¹⁴ cm^-2.The results of prism-coupling indicate index-enhanced single mode optical waveguide is formed at a wavelength of 632.8 nm.The corresponding fitting results indicate that,transverse electric guiding mode is well confined in the waveguide region.The fluorescence emissions are measured under excitation with 808 nm laser.The investigation of photoluminescence measurement demonstrates the upconversion?UC?luminescence intensity can be effectively improved by the Si ions implantation.The YbVO₄ single crystal is implanted with a sequence of keV Er ions and 6.0MeV C ions at room temperature.The prism-coupling result indicates that the index-enhanced planar optical waveguide is formed in C/Er co-implanted sample.The corresponding fitting results indicate that,transverse electric guiding modes are well confined in the waveguide region.The fluorescence emissions of implanted sample are demonstrated under 980 nm excitation.Also,a conceivable modal of photoluminescence upconversion emission is proposed.The results have important reference for the application of TeO₂,Nd:YLF and YbVO₄ crystals based on ion implantation.