Research On The Performance Of Memristive Devices Based On Graphene Oxide Quantum Dots And Titanium Carbide And Synaptic Bionics

Memristor is a new type of device whose resistance changes with the change of thecharge flowing through it.Due to its unique performance,the memristor's application in artificial electronic synapse and data storage become the focus of researchers.In the study of bionic synapses,researchers use the resistance in memristors to replace the weights in synapses and simulate the functions of human synapses;in terms of data storage,it uses its simple structure,low power consumption,preparation process and the compatibility of traditional CMOS production processes and other features has realized the storage of two or multi-level data,and is expected to become an alternative product to replace the existing mainstream memory in the post-Moore's Law era.In recent years,as a representative of new materials,two-dimensional functional materials have shown their advantages in optical,electromechanical and other aspects,and have shown excellent performance in the field of memristors.This article mainly studies the impact of two-dimensional functional materials on the performance of memristive devices,based on two-dimensional graphene oxide quantum dots and Ti₃C₂T_x.This paper mainly done the following three aspects:1.The effects of different concentrations of graphene oxide quantum dots?GOQDs?on the performance of Ag/Hf_0.5Zr_0.5O₂?HZO?/Pt device were investigated.GOQDs were embedded in HZO by spin coating to prepare devices with Ag/HZO/GOQDs/HZO/Pt structure with different concentrations of GOQDs.The test results show that as the density of GOQDs increases,the resistance change of the corresponding device will change from abrupt to slow.And the resistance of high-concentration GOQDs devices can be adjusted accordingly,and basic functions of neurosynapses including spike-timing-dependent plasticity?STDP?,paired-pulse facilitation?PPF?can be simulated.The investigation of the conductive mechanism of the device found that what led to these phenomena was that the high concentration of GOQDs prevented Ag⁺from migrating through the barrier layer,resulting in a slower formation of Ag conductive filaments.This study shows that memristor devices with appropriate concentrations of GOQDs have great potential in artificial electronic synaptic applications.2.Explore the effect of Ti₃C₂T_x on the performance of HZO memristive devices.In this experiment,a device with an Al/HZO/Ti₃C₂T_x/Pt structure was prepared.The device test results show that compared with Al/HZO/Pt memristive devices without Ti₃C₂T_x embedded,the I-V ratio of the device is higher.Change,and the device can simulate the basic functions of biological synapses such as PPF and STDP.According to the analysis of the conductive mechanism of the device,it is considered that the conductive mechanism of the device is caused by the electronic transitions caused by the internal defects of HZO and Ti₃C₂T_x in the high-resistance state,and is caused by the oxygen vacancy conductive channels formed in the low-resistance state.This work shows that two-dimensional Ti₃C₂T_x materials have good potential in improving memristor performance.3.GOQDs were embedded in Ti₃C₂T_x to study the effect on the performance of memristive devices.An Ag/Ti₃C₂T_x/GOQDs/Ti₃C₂T_x/Pt structured device was prepared experimentally.The test results show that the device exhibits typical bipolar resistance switching characteristics.Compared with the characteristics of Ag/Ti₃C₂T_x/Pt devices,the switching voltage is 2.3V/-1.8V is reduced to about 0.5V/-0.3V,and the device's turn-on time has reached a good performance of 13ns.According to the analysis of the conduction mechanism of the device,it is believed that the addition of GOQDs can promote the migration of silver ions in the resistive layer and then promote the rapid formation of conductive channels.This work provides a new way to improve the properties of 2D materials.