Electrical And Raman Scattering Of ?-? Nanostructure With Surface Charge Transfer Doping

Low-dimensional organic/inorganic nanomateirals have excellent optoelectronic performances,and they are the ideal materials to fabricate high-performance nanodevices,and the optoelectronic devices are also key research objects in the new generation optoelectronic technology field.Optimizing the structure of device interface(semiconductor/air,semiconductor/semiconductor,semiconductor/metal.)and constructing high performance devices reveal the importance of interface control in improving the device performance,and promoting the evolution of low-dimensional materials in optoelectronic device.Moreover,the study of semiconductor optical properties is increasingly concerned by researchers,such as graphene,transition metal disulfides(TMDs)and so on.During the last decade,various nanodevices,such as field-effect transistors(FETs),integrated circuit,light-emitting diodes(LEDs),photodetectors,sensors,and solar cell devices have been widely applied and studied.In addition,the surface charge transfer doping has attracted more and more attention because it is a convenient and effective method to change the properties of nanodevices in the current study.It has been reported that in some low-dimensional nanodevices,through controlling materials' interface by surface doping method,and the results reveal the regulating effect of surface effect on the electrical transport characteristics of low-dimensional semiconductor nanostructures.Here,surface charge transfer doping method was applied in ?-? CdS nanostructures,achieving a high concentration p-type doping of CdS and constructing of homogeneous p-n junction.At the same time,the influence of surface doping on Raman properties in graphene and transition metal disulfide(TMD)have been widely studied,and has obtained some promising results.However for II-VI semiconductors,surface charge transfer doping effect at present is restricted to the electrical properties.Based on this,the surface charge transfer doping method was used to study the electric properties and Raman properties,and the main work carried out was listed as follows:First,p-type(M0O3 nanodots)and n-type(benzyl viologen)dopant were used to dope the CdS nanobelts respectively,and discussed the relationship between dopant concentration and the FET characteristics.According to transfer characteristic curves of FET devices,carrier concentration and mobility of CdS nanobelt were got before and after MoO3 nanodots or benzyl viologen doped.As a result,with the increase of dopant concentration,carrier concentration and mobility showed regular changes.At the same time,SEM,TEM,AFM were also used to characterize the CdS nanobelts.Second,the optical Raman properties of the CdS nanobelt were also studied before and after MoO3 nanodots or benzyl viologen doped.Incorporating with the results in the first part,the relationship between carrier concentration and optical Raman properties of semiconductor were discussed.With the increase of dopant concentration,the CdS nanobelt Raman characteristic peak showed regular shift,and the 2LO characteristic peak shifts to magnify of wavenumber with carriers concentration rise.