Study On The Low Temperature Resistance Storage And Negative Photoconductivity Of Ultrafine Metal @Al₂O₃ Nanohybrids

For zero band gap metals Fe and Ag,and ultra-wide band gap inorganic compounds Al₂O₃,there are no response to visible light and heat due to the limit of their energy gaps.In this paper,one-dimensional nanohybrids in which ultrafine metal Fe and Ag nanocrystals are homogeneously distributed in the wall of alumina nanomaterials,are synthesized via hydrothermal method followed by heat treatment under reducing atmosphere.The electron motion is effectively controlled by the synergistic effect of nanohybrids,resulting in a strong interaction with light,heat and electricity.Therefore,the nanodevices of resistance storage and negative photoconductive detectors can effectively be constructed based on the metal@alumina nanohybrids with unusual function.The main results are as follows:?1?In this paper,individual Fe@Al₂O₃ hybrid nanotubes,in which ultrafine Fe granules are dispersed in the wall of alumina nanotubes,are synthesized via two-step hydrothermal method followed by heat treatment under reducing atmosphere.The device,based on Fe@Al₂O₃ hybrid nanotube with M-I-M structure,has the characteristics of bipolar resistivity switching at low temperature,accompanying with negative differential resistance?NDR?effect.For the memory of resistive switching,due to its excellent storage stability and considerable On/Off ratio,Fe@Al₂O₃nanotubes will be able to be applied in resistive random access memory?RRAM?.?2?Ag@Al₂O₃ hybrid nanorods are synthesized via the same method as Fe@Al₂O₃.The device,based on an individual Ag@Al₂O₃ hybrid nanotube with M-I-M structure,shows a negative photoconductive effect under visible illumination in range from 405 to 980 nm at room temperature.In particular,it can show a strong selectivity to near ultraviolet and 850 nm infrared light.At low operation voltage,in addition,the device has significant continuous negative photoconduction to near-ultraviolet light,which can realize near-UV light memory storage performance.?3?The device,based on a single Ag@Al₂O₃ hybrid nanorod with M-I-M structure,has the characteristics of bipolar resistance switch at low temperature with considerable On/Off ratio.Although the storage stability is not extremely stable,the research of Ag@Al₂O₃ nanorod in memory field is of certain significance.