Effect Of Graphene Oxide Modification On Photoresponse Performance Of SnSe

The research scope of nanomaterials is very extensive,covering a wide range of contents.Its research fields range from atomic groups to large bulk materials and then to the development of ultra-thin two-dimensional nanostructure materials.Following graphene,IV-VI narrow-gap semiconductor materials are used as new quantum functional materials,with excellent electrical and optoelectronic properties,can be widely used in photo-electronic devices such as photodetectors,photovoltaic devices,and lasers.Our main task is to work on the preparation of SnSe thin films and GO/SnSe composite structures,characterization of morphological structures,and photoresponse performance tests for IV-VI narrow-bandgap semiconductor SnSe.The main research content includes:1.The growth of SnSe film was achieved on the surface of silicon dioxide(SiO2).The controllable preparation of SnSe thin films was achieved by controlling the growth conditions such as temperature,pressure,and carrier gas flow rate during SnSe growth.A series of characterizations of the grown SnSe films were performed,and a simple photodetector was constructed using SnSe films grown on SiO2 substrates.2.The photoresponse performance of a photodetector constructed using SnSe thin films was investigated.Using 405nm,532nm,650nm,808nm,and 850nm laser sources as the incident light,the current-voltage characteristics of the photodector,as well as the optical switching characteristics,respectively,it was found that tin selenide has a good response in the visible to near infrared(NIR)range,and the response has the characteristics of high speed,good stability,and high repeatability.3.The GO modification of SnSe was achieved by the drop-coating solution of graphene oxide quantum dots on the surface of SnSe thin film,and a photodetector was constructed using the composite structure.By studying the photoresponse of GO/SnSe,it is found that the use of GO modified SnSe can not only significantly increase the photocurrent size,but also increase the photoresponse speed,without affecting the stability and repeatability of the device.