Weak Epitaxy Growth Of Pentacene And Naphthalene Diimide Film

The organic semiconductor material is rich in types and excellent in electrical properties,and can prepare various types of functional devices;its high compatibility with an elastic substrate can realize the preparation of flexible devices;and the processing temperature is low and it is easy to process in a large area,making it a preparation for high energy.The important material system of electronic devices.Over the past decade,with the continuous deepening of research on organic semiconductor materials,the performance of devices made of active materials has been greatly improved,and it has surpassed the level of amorphous silicon,and it has great development prospects in commercial applications..The main work of the thesis is divided into two parts:the relationship between the growth morphology of the pentacene film and the device performance,and the preparation of crystalline naphthalene diimide derivatives.Among organic semiconductor materials,Pentacene Pentacene is a p-type small molecule material with high transistor performance.Its single crystal transistor has an excellent mobility of 58 cm²/Vs,and its thin film transistor OTFTs have a mobility of about0.038 cm²/Vs,there is a big gap with single crystal devices.Pentacene grows directly on Si O₂.The first two molecular layers grow in a layered manner as a thin film phase.From the third layer,the thin film grows in an island-like manner and appears as a bulk phase.There is a critical thickness transition from the thin film phase to the bulk phase,and this critical thickness changes with the film preparation conditions.In order to make multi-layered Pentacene films grow in layers,a multi-layer large-size continuous film is obtained to improve the device performance of the Pentacene thin film transistor.Using weak Expitaxy growth techniques,rod-like molecules of hexaphenylene p-6P,bithiophene BP2T,and phenanthrene BPPh were introduced as inducing layers.Since the organic film growth process is a result of thermodynamic and kinetic competition,a large-size continuous Pentacene film was prepared using a 1ML and 2ML inducing layer film as a substrate,and a thin film transistor was fabricated.In the p-6P thin film with a single layer and double layer as the inducing layer,a large-scale Pentacene thin film with nearly layered growth was obtained by the weak Expitaxy method.In addition,the p-6P/Pentacene thin film transistor also showed a high hole migration.rate.From the perspective of large-scale practical production,n-type organic semiconductor materials play an extremely important role in bipolar transistors and complementary circuits.At present,most organic semiconductor materials are mostly p-type,and there are less n-type materials,which makes the type of organic thin film transistor too single,the n-type mobility is also relatively low,and the device performance is poor.Therefore,experimentally selected naphthalene diimide derivatives of n-type small molecule materials?DCyNTDA,DPNTDA,NTDA-C6H13?having higher stability,good photoelectric properties,and molecules having larger?-?conjugated systems For the research object,p-6P,BP2T,etc.can be introduced as Expitaxy inducing layer,and the substrate temperature is increased so that the inter-molecular force is stronger than the force between the molecule and the substrate,thereby achieving the molecular erect growth;The lattice matching and other effects achieve a highly ordered arrangement of the naphthalene diimide derivative films,so that the?-?overlap direction between the naphthalene molecules is parallel to the film plane,which is advantageous to improve the carrier of the film in the film Within the electric transport.The DCyNTDA thin film,DPNTDA thin film and NTDA-C6H13 thin film were prepared by weak Expitaxy growth.The first few layers were grown in an orderly layer and the film quality was better.Among them,BP2T/DCyNTDA thin film transistors exhibit higher electron mobility.Therefore,the preparation of multi-layered,large-sized,flat continuous films improves the performance of the hole?p-type?OTFTs and explores the n-type naphthalene film morphology and the device performance of its electronic?n-type?OTFTs.The study has important significance.