The Exploration On The Synthesis Of The ?-? Group Semiconductor Nanomaterials And Their Photoelectrical Devices

With the rapid development of nanoscience and nanotechnology,the synthesis and study of new semiconductor nanomaterials come out one after another.Among them,?-? group semiconductor materials are important among the big family with wide bandgap distribution,diverse crystal structure,excellent optical properties,electrical properties and magnetic properties,which make it have a unique application prospect in photoelectric detection,gas sensing,photocatalysis,and so on.This paper focuses on the systematic study of ?-? group semiconductor nanomaterials,including the synthesis of materials,optical properties and photoelectronic properties,the main research work is as follows:High quality In₂S₃ kinks were synthesized via a kinetically controlled thermal deposition process and their optoelectronic characteristics were systematically explored.The growth mechanism was attributed to the combination of kinetic dynamic,crystal facial energy,and surface roughness.Two trap induced emission bands were evidenced via a low temperature cathodoluminescence study.Furthermore,the nanowire junctions demonstrated a degenerative photodetection performance,as compared to the straight arms,attributed to a stress-induced extra series resistance measured from the kinked area.The well-controllable shape of the inorganic nanostructures and the detailed exploration of their optoelectronic properties are particularly valuable for their further practical applications.High quality p-type ultrathin GaSe nanoribbons were synthesized through a one-step thermal deposition process and their optoelectronic characteristics and device applications have been systematically explored.The steady-state CL study reveals the presence of two emission bands and the trap relevant emission at 710 nm is more intense at low temperatures.The ultrathin GaSe nanoribbon-based photodetectors reflect an excellent spectral responsivity of 31.1 A W^-1,external quantum efficiency of 11046%and a detectivity of 3.29?10¹⁰ Jones.In addition,under illumination,the phototransistors have shown quadrupled mobility up to0.12 cm²V^-1s^-11 in comparison with the value(0.03 cm²V^-1s^-1)measured in darkness,attributed to a joint effect of increased photo-generated carriers and the reduced Schottky barrier.The In₂O₃-In₂S₃ heterojunction was successfully synthesized by two-step method and their optoelectronic characteristics and device applications have been systematically explored.Compared with pure In₂O₃,the absorption spectrum of In₂O₃-In₂S₃ heterojunction has no strong absorption band edge,and the shell In₂S₃ broadened the spectral absorption range of In₂O₃ nanowires.The spectral response and external quantum efficiency of In₂O₃-In₂S₃heterostructure optoelectronic devices were found to be declined compared with In₂O₃nanoweires,but the spectral response time and recovery time were greatly improved.