| Cadmium selenide(CdSe)crystal is a multi-functional II-VI compound semiconductor material which has a promising direct transition band gap,and has excellent photoelectric properties.The band gap of CdSe semiconductor is 1.74 ev,which has great application value in solar cell.More and more attention has been paid to the growth technology of CdSe crystal with its attractive application potential and the difficulty of preparation.At the same time,directional cutting of crystal is still a big problem,which is difficult for the preparation of the device.The focus of this paper is to explore the simple and convenient method of preparation of CdSe crystal and the growth morphology of CdSe crystal.This paper adopts the method of unconstrained quadratic physical vapor phase spontaneous to grow the CdSe crystal with natural reveals,and explores the growth morphology.The samples were characterized by X-ray diffractometer(XRD),Plasma mass spectrometer(ICP-MS),Scanning electron microscope(SEM)and Fourier Infrared Spectrometer.The research results mainly include the following points:(1)We test the CdSe growth materials sold in the market,a growth of vapor-phase transport method CdSe powder material and unconstrained quadratic physical growth of gas phase method CdSe powder by XRD,contrast CdSe standard XRD spectrum,found the unconstrained quadratic physical vapor phase method of CdSe diffraction peak,peak shape sharp and high strength.Thus,the quality of the prepared CdSe crystals is good.(2)In order to further study the crystalline quality of CdSe crystals prepared by unconstrained two physical gas phase method,3 natural exposed surfaces of the sample were tested by XRD.The test results showed that the 3 natural exposure surfaces were(100),(002)and(110)sides,respectively.According to the BFDH model,the space between(100),(110)and(002)is relatively large and is larger than the other crystal surfaces,so the moving rate of the crystal surface is small and easy to be exposed.The {100} surface cluster and {002} surface cluster appeared three degree diffraction peaks,and the diffraction peaks were sharp,highly symmetrical and high intensity Were back swing test,3 swing back peak intensity is high,the sharp peak is Gauss symmetric distribution,half peak width smaller respectively 0.214 degrees,0.164 degrees and 0.193 degrees.It is shown that the CdSe crystal structure obtained by the unconstrained two physical gas phase method is relatively complete and the crystallization quality is better.(3)In order to analyze the change of impurity content in CdSe crystal prepared by unconstrained secondary physical gas phase.The content of seven impurities such as Cu,Ag and Mg in CdSe crystals prepared by a gas phase transport method and unconstrained secondary physical gas phase were tested by plasma mass spectrometer,the testing results show that the Cu,Ag and Mg three kinds of impurities in the growth phase of the unconstrained two gas,its content decreased significantly,indicating that the preparation of CdSe crystal phase method using unconstrained two physical gas,can effectively improve the purity of crystal.(4)Scanning electron microscopy observe cleavage plane,cleavage section ladder,and step direction is parallel z,without the phenomenon of package.(5)A sample of CdSe crystals grown with unconstrained secondary physical gas phase was investigated and tested by infrared transmittance.The CdSe crystal has a high transmittance of up to 60% at 5-20 ?m waveband. |
PDF Full Text Request