Study On DLC Films Deposited By Microwave ECR Chemical Vapor Phase Deposition

This article mainly USES the microwave electron cyclotron resonance plasma chemical vapour deposition method preparation of rigid class diamond film(DLC),and the DLC thin film preparation parameters,structure composition and performance was studied and characterized.The best preparation process of DLC film was obtained.Using microwave electron cyclotron resonance plasma deposition(ECR CVD)method in depositing of DLC film monocrystalline silicon slice,the course of the experiment,in order to CH4 gas as carbon source,Ar gas as auxiliary ionized gas,500 w microwave reaction gas ionization,high density plasma generated in the substrate surface of complex chemical process,and then deposited on the surface of the substrate.In order to obtain the optimum process of laboratory equipment preparation of DLC films,in the case of other conditions unchanged,studied different substrate negative bias dc and substrate parameters such as rf self bias and preparation of the DLC film structure and the relationship between the optical performance.Then the preparation of samples under different deposition parameters were characterized,respectively,Raman spectroscopy,Fourier transform infrared spectrometer,film thickness measuring instrument,optical microscope and characterization methods,such as ultraviolet/ visible light/infrared spectrophotometer studied the structure composition and visible light transmittance of thin film,etc.Experiment to study the first microwave ECR chemical vapor deposition,different dc negative substrate bias influence on film composition,bias 0 ~ 200 v in the process of increasing,found that the substrate without bias not DLC thin film growth;When the partial pressure increases to 150 V,the growth film is a typical DLC film,and the structure and performance of the film are better.In 200 V,the content of sp3 in the film decreased.The results show that the content of sp3 in the film increases first and then decreases with the increase of negative bias.Substrate was studied after the relationship between the dc bias and preparation of insulating film,it was found that although the preparation is insulation film,but negative bias dc load time can still affect the structure of DLC films,presumably due to the thin film thickness,with film thickness measuring instrument measured load time longest film thickness of 156 nm,membrane graphite clusters in large volume,formed in the film show that the longitudinal conductive channel,so the dc bias affects the structure and composition of thin film growth.Then,the process parameters and optical properties of thin films prepared by rf bias were studied.