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Study On Preparation,characterization And Photoelectrochemical Performance Of CuSbS2 And Cu2ZnSnS4-based P-n Junction Nanowire Photoanodes

Posted on:2019-08-13Degree:MasterType:Thesis
Country:ChinaCandidate:R R SuFull Text:PDF
GTID:2371330566986290Subject:Physical chemistry
Abstract/Summary:PDF Full Text Request
Recently,hydrogen evolution by photoelectrochemical water-splitting should prove to be the core-component technology to surmount environmental pollution and energy dilemma conundrums.To find a material that is high efficient,stable,earth-abundant and with an appropriate band gap is still a big challenge.Owing to the ideal band gap,high absorption coefficient,low-toxic and earth abundant,CuSbS2 and Cu2ZnSnS4 may be a promising visible light absorber in the photo-electrochemical field.CuSbS2-based and Cu2ZnSnS4-based photocathodes have been reported.However,the related photoanodes have been rarely mentioned.Moreover,making good contact heterojunction is another key issue that promotes the performance of photoelectrode.In this paper,we are mainly explored the preparation conditions,characterization and photoelectrochemical properties of the photoelectrodes.The main research work of this paper is as follows:?1?Novel ZnO/CdS/CuSbS2 core-shell structures were constructed as photoanode for hydrogen evolution through non-aqueous electrodeposition and cation exchange.The structures,morphologies,optical properties and photoelectrochemical performance of the samples were characterized by XRD,SEM,TEM,UV-vis,PL and electrochemical measurement technologies.The optimal ZnO/CdS/CuSbS2 photoanode achieves a photocurrent of 6.42 mA/cm2 at 0 V vs.Ag/AgCl.Finally,the mechanisms for the improvements of photoelectrochemical activities were discussed.?2?Highly efficient photoanode ZnO/CdS/Cu2ZnSnS4 was prepared by introducing Cu2ZnSnS4 and CdS into the ZnO system via two step electrodeposition method.ZnO/CdS/Cu2ZnSnS4 with different thickness ratio were fabricated by adjusting the electrodeposition time.The optimal ZnO/CdS/Cu2ZnSnS4 photoanode achieves a photocurrent of 7.60 mA/cm2 at 0 V vs.Ag/AgCl.Meanwhile,the mechanism for the enhancement of photoelectrochemical performances and the role of p-n junction and buffer layer were proposed.
Keywords/Search Tags:Photoanode, Nanowire arrays, Core-shell structure, p-n junction
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