Organic Nanosynthesis Of Nano-gridarene With D-A-type Rung For Charge-trapping Transistor Memories

Gridarene are a class of organic nano-materials with future potential,both good solubility,optoelectronic properties and nano-characteristics.It is of utmost importance to develop methods for the effective regulation of electronic structures,transmission characteristics,and excited-state behaviors to meet the requirements of transistor memories for charge-trapping materials.At present,the D-A molecular design strategy is a universal method that can effectively adjust the energy band width,luminescence behavior and carrier transport ability.In view of this,this dissertation aims to introduce D-A into gridarenes,focusing on its organic nano-synthesis and structural characterization;and as a charge-trapping material,it is introduced into the transistor memory to study the differences.The specific work is as follows:1.Construction of L-shaped Substrates with A₁B₁-Type,and introduce the benzothiadiazole?BT?and benzotriazole?BTz?units with different electron-withdrawing ability from the 9-bit position of fluoerneyl to the gridarene.The yields of the Grid-BT-2L and Grid-BTz-2L molecules were 62%and 65%,respectively.Transistor memory with Grid-BT-2L as charge trapping material was found to have high carrier mobility(1.23 cm²V^-1s^-1)and fast program/erase speed?0.02 s?,with larger memory window?>50%?with stable maintenance capability(I_ON/I_OFF=1.56×10⁴).This shows that the D-A units introduced into the gridarenes have good storage properties.2.The configuration is one of the important characteristics of organic semiconductor materials and has a certain influence on the charge-trapping ability of the electret material.We have been fortunate enough to isolate the isomers Cis-Grid-2L and Trans-2-Grid-2L of the Grid-BTz-2L gridarene,and confirmed their structures by NMR.It is found that there are differences in the performance of the transistor memory of the Cis-Grid-2L and the Trans-2-Grid-2L,indicating that the structure of the isomer of gridarenes the have an important influence on the ability of the memory to capture charge.3.Grid-3L and Grid-4L multi-gridarene are also separated at the same time as Grid-2L are obtained.By observing the photophysical properties and electrochemical properties of the multi-gridarene,we found that the electrochemical bandgap of D-A type multi-gridarenes increase with the ring enlargement.By testing the transistor memory of the charge-trapping material of Grid-BT-3L and Grid-BT-4L,the field-effect characteristics and storage characteristics of Grid-BT-3L and Grid-BT-4L are far from that of Grid-BT-2L.The good performance further demonstrates the advantages of Grid-2L.The observation,summary and regularity of these phenomena have provided the basis and experimental reference for further revealing the molecular charge trapping mechanism and developing a new type of electret effect electret material.