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Chemical Vapor Growth Of Ni-Si Nanowires And Their Conductivity

Posted on:2019-04-22Degree:MasterType:Thesis
Country:ChinaCandidate:P Y ChenFull Text:PDF
GTID:2371330596960735Subject:Optical Engineering
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One-dimensional nickel-silicon(Ni-Si)nanowires have the potential to be applied in a many fields,such as microelectronics,photovoltaic cells,biosensors,thermoelectrics because it can be synthesized at a low temperature and compatible with semiconductor processing.The research on their synthesis,growth mechanism,and properties is conducive to understanding the mechanism of crystal growth,controlling morphologies and structures,and their effect on properties.This will provide a basis for designing and fabricating nanoscale devices in the future.The thesis focuses on the preparation and growth mechanism of the nickel-silicon nanowires and the photoelectric properties.The main researches inclued:(1)The method of plasma enhanced chemical vapor deposition(PECVD)was employed to fabricate Ni-Si nanowires.By adjusting growth temperatures,gas flow and growth pressures,a method of controlling the growth Ni-Si nanowires has been given.Based on the result of characterization of structure of nanowires,we put forward a VLS model to explain the growing mechanism of Ni-Si nanowires.(2)The thesis also investigated the photoelectric properties of the Ni-Si nanowires.The measurement of a single Ni-Si nanowire have shown that the relationship between current and voltage is linear,and the Ni-Si nanowire is a good conductor.The nanowire array shows a better conduction than the single nanowire because it consists of the nanowires which are parallely connected.In addition,the optical measurement of Ni-Si nanowire arrays shows that they are a light-trapping structure because the optical path of incident light is prolonged by the reflection between the nanowires.
Keywords/Search Tags:nickel-silicon nanowires, plasma enhanced chemical vapor deposition, substitutional solid solution, controlled preparation, trapping light mechanism
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