Multi-Functional Modification Of Wafer-Scale Monolayer MoS₂ By Nitrogen-Doping

Continuous wafer-scale monolayer MoS₂ with controllable doping is highly desired for its fundamental physics study,mass production and widely applications in advanced electronic devices.In this article,two inches size continuous wafer-scale monolayer MoS₂ with substantial sulfur vacancies is obtained using laser molecular beam epitaxy technique.The intrinsic sulfur vacancies present an excellent platform for modulating the functionalities of monolayer MoS₂ through vacancy engineering.Based on theoretical calculations and experimental validations,it is illustrated that nitrogen is a promising in-plane heteroatom dopant for multi-functional modification of monolayer MoS_2,such as photoluminescence,ferromagnetism as well as work function.The photoluminescence intensity can be significantly enhanced over a wide range by controlling the nitrogen-doping level.Magnetic measurement results clearly show the evolution of ferromagnetism for nitrogen-doped monolayer MoS₂,which is the first demonstration and guides an efficient strategy for exploring two-dimensional diluted magnetic semiconductors by nonmetal atoms nitrogen-doping.Furthermore,we demonstrated that nitrogen-doping is an effective approach to engineer the work function of monolayer MoS₂.The fabrication of continuous wafer-scale nitrogen-doped monolayer MoS₂ provides a viable route toward coordinate modulating the functionalities of monolayer MoS₂ and promote its applications in photoelectric devices or novel semiconductor devices.