The Molecular Dynamics Simulation And Theoretical Model Calculation Of Thermal Interface Resistance Between Silicon Superlattice And Aluminum

With the rapid development of the science and technology,the integration of micro and nano electronic devices becomes higher and higher,the internal size reaches the nanoscale.So it is essential to reduce the thermal interface resistance and improve the thermal transport properties of electronic devices.But researchers can’t explain the thermal transport mechanism at the interface clearly due to the complex thermal transport process.In this paper we studied the property of the thermal interface transport between aluminum and silicon superlattice,by using the molecular dynamics simulation and interface theoretical model analysis.This thesis proposed a method that is to use superlattice structure to reduce the thermal interface resistance.In this part,we studied the thermal transport between the silicon superlattice and aluminum by using molecular dynamics simulation.The results show that thermal interface resistance would reduce with the increase of the cycle length and the atomic mass of silicon isotope.It is mainly related to the phonon wavelength and phonon destiny of states.This study provides a new idea to regulate the performance of thermal transport at the interface.At present,the theoretical models describing the thermal interface transport include acoustic mismatch model,diffuse mismatch model and mixed mismatch model.In order to understand the thermal transport properties and the limitations of interface theoretical model.We calculated the thermal interface resistance between the silicon superlattice and aluminum by using the interface theoretical models.Comparing with the results from molecular dynamics simulation,we found that the mixed mismatch model is more accurate.The study in this thesis would be helpful for people to understand the interfacial transport mechanism better.