Preparation And Characterization Of The Ceramic Target With Doped Zinc Oxide

Transparent conductive thin films,transparent and conductive simultaneously,Generally,?1?thin films do not contain all features simultaneously which are necessary for transparent conducting devices such as large band gap?>3.0 eV?;?2?intransmittance?>80%?;?3?small resistivity?i.e 10-5to 10-4 ?·cm?.For example,metals are conductive but non-transparent,while glass has high transmittance insulator,therefore,Preparation of transparent and conductive films can be possible-via doping the target material.This paper experiment by means of ZnO doping,using the traditional method of dry pressing molding,atmospheric pressure sintering performance of doped ZnO preparation of target.Study discusses the sintering temperature on the properties of TiO₂ doped ZnO material;TiO₂ doping quantity effect on the properties of ZnO material;Ball mill time of TiO₂,Al₂O₃ doped powder particle size and the influence of the target material;Al₂O₃ doping effect on the properties of TZO target;Sintering temperature on the properties of TiO₂,Al₂O₃ doped ZnO material;TAZO characterization of thin film photovoltaic performance,the following conclusions:1.For the preparation of TiO₂doped ZnO material,The experiment with the 1.0%amount of TiO₂ doped,sintered under 1300?,The comprehensive performance of target material are the best.The target material density was 99%,and the bending strength of 120MPa,microhardness of 450 MPa,The resistivity of 3.76 ?·cm.meet the using demand of the sputtering deposition.2.For Al₂O₃,TiO₂ doped ZnO preparation of mixture,the study found that ball mill time effects in the first 24h,and mixing size D75 including m rapidly falling from 7.5 to 1.5 ?m,as the ball mill time extended,ball mill of powder particle size effect is not obvious.But with the extension of time of ball mill,The TAZO density of target material appear gradually rising trend.3.In order to further improve the doping TZO conductivity of target material,the preparation of the TAZO target material,the experiment get Al₂O₃ 1.0wt%doping TZO target material,sintered under 1300?,The density of target material was 99%,And the bending strength of 135 MPa,microhardness of 400 MPa,The resistivity of 3.76 ?·cm.The excellent comprehensive performance of target material.4.In order to further verify the target material whether meet the requirements of the preparation of transparent conductive film,select experiment preparation of TAZO PLD coating material,Get the following conclusion:No other second phase in the film,Film on the direction?002?preferred orientation,crystallization properties,The preparation of the thin film square resistance as low as 30 ?/?,Carrier concentration for 9.61×1021 cm-3,Visible light transmittance up to 90%,Fully meet the requirements of the use of transparent conductive films.