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Effect Of Hf4+ Concentration On Defect Structure And Optical Properties Of Yb:Tm:LiNbO3 Crystals

Posted on:2020-07-19Degree:MasterType:Thesis
Country:ChinaCandidate:C R LiuFull Text:PDF
GTID:2381330575488911Subject:Materials Physics and Chemistry
Abstract/Summary:PDF Full Text Request
Hf:Yb:Tm:LiNbO3 crystals were successfully prepared by Czochralski method.The doping concentration of Hf4+was 2 mol%,4 mol%and 6 mol%,respectively.The defect structure and dopant occupancy of crystals with different Hf4+concentration were investigated.The influence of Hf4+concentration on the upconversion luminescence and optical damage resistance ability of Hf:Yb:Tm:LiNbO3 crystals were discussed.The concentration of Hf4+,Yb3+and Tm3+ions were analyzed via inductive couple plasma atomic emission spectrometer.In addition,the relationship between the separation coefficient of Hf4+,Yb3+and Tm3+ions and Hf4+concentration were analyzed.It is found that the increase of Hf4+ion doping concentration leads to the decrease of Hf4+ion segregation coefficient,while that of Yb3+ion and Tm3+ion decreases gradually.The influence of Hf4+doping concentration on defect structure and doping occupancy in Hf:Yb:Tm:LiNbO3 crystal was measured and discussed by IR absorption spectra,UV-VIS-NIR absorption spectra and X-ray powders diffraction.The result showed that Hf4+ion enters into LiNbO3 crystal by priority replacing intrinsicNbLi4?10?defect in form ofHfLi3?10?when the doping concentration of Hf4+ion was below the threshold concentration.However,when the doping concentration of Hf4+ion reached or exceed the threshold concentration,NbLi4?10?defects completely replaced,and Hf4+will occupy the Li site and Nb site in the form ofHfLi3?10?and HfN-b defects.The upconversion fluorescence of Hf:Yb:Tm:LiNbO3 crystals was obtained under 980nm excitation in the range of 400-700nm.And the energy transfer mechanism of upconversion process was analyzed in detail.The strong emissions were observed at 475nm in the blue wavelength range and 651nm in the red wavelength range.Remarkably,enhancement of upconversion emissions was achieved by tridoping Hf4+ions.The light damage resistance of Hf:Yb:Tm:LiNbO3crystal was analyzed by light scattering threshold energy flow method.It is found that the light damage resistance of Hf:Yb:Tm:LiNbO3 crystal can be effectively improved by increasing the doping concentration of Hf4+ions.When Hf4+concentration increased to 6mol%,the optical damage resistance of the crystal was48 times of that of the 2mol%Hf4+doped crystal.Through systematic research and analysis,Hf?6mol%?:Yb?1mol%?:Tm?1mol%?:LiNbO3 crystal has the best luminescent properties and the strongest ability of light damage resistance among this series.
Keywords/Search Tags:Hf:Yb:Tm:LiNbO3 crystal, structure defect, upconversion luminescence, optical damage resistant
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