| In recent years,two-dimensional materials have attracted more and more attention for researchers due to their unique properties,such as electrical,optical performance and atomically thin structures.As the first two-dimensional layered material,graphene has excellent electrical,optical and mechanical properties,but its zero bandgap hinders its application in the semiconductor field.Therefore,two-dimensional semiconductor materials with finite band gaps have become powerful candidates of complementary for graphene.SnS2 is one of them,which has the advantages of non-toxic and harmless,low cost,earth-abundant and environment friendly.In addition,SnS2 has a CdI2-type layered lattice structure,which is combined with Van der Waals forces,so it can be prepared with mechanical exfoliation method.Furthermore,an indirect band gap of 2.1 eV also makes SnS2to be a candidate for nanoelectronics and optoelectronics fields.In this paper,SnS2 and SnSSe single crystals were successfully synthesized by chemical vapor transport method(CVT),and proved to have good quality by XRD,Raman and other techniques.It provides a basis for further mechanical exfoliating and obtaining layered SnS2.Using the strong adhesion between the surface of SnS2 single crystal and the gold layer,a method of gold-assisted exfoliation of single crystal SnS2 to obtain large-area layered two-dimensional SnS2 with high-yield was developed,and the prepared layered films were fully characterized.Finally,the field effect transistor based on layered SnS2 was fabricated by micro-nano processing technology.The on/off ratio of the device reached 6.9×105 and the mobility was 2.8cm2V-1s-1,which further proved that the obtained layered SnS2 has high quality.And the successfully preparation of few-layer SnS2 with high quality and large size provides convenience for the design,fabrication and investigation of complex devices based on layered SnS2 in the future. |
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