Study On TiN-based Optical Devices And The Characteristics Of TiN Thin Film For Devices

Since the surface plasmon effect can help to control the light on the micro-nano scale,the size of the optical device based on this method can be greatly reduced and applied to various types of integrated miniaturized devices.Limited by the cost of precious metal materials used for conventional surface plasma excitation,the development of alternative plasma materials and device structures based on related materials,TiN is a traditional refractory with good electrical conductivity.Its dielectric constant has a positive and negative transition in the visible band,and it has the characteristics of plasma resonance.The FDTD software was used to design and simulate the properties of the dimeric field based on TiN materials and its feasibility in the Raman enhancement field.The infrared filter components based on TiN materials and their characteristics are TiN materials in such devices.The application provides theoretical support.On this basis,the TiN film was prepared by magnetron sputtering method,and the influence of process parameters on the properties of the film was analyzed,which provided a reference for the preparation of high performance devices.The main research contents of this paper are as follows:1?The field enhancement characteristics of TiN dimer nanoparticles were studied.It was found that TiN dimer can be used for SERS substrate preparation.On this basis,the structure of the Au@TiN dimer based on core-shell coating was further proposed,and the higher enhancement factor was obtained while taking into account the stability of the dimer nanoparticles.The structure of the Au@TiN dimer with an enhancement factor of 109 was optimized.2?A near-infrared optical filter based on TiN is designed.The effects of structural parameter changes on the peak wavelength and half-width of the filter are studied by FDTD simulation.The adjustment of the transmission wavelength from 0.8 ?m to 2.5 ?m is achieved by adjusting the TiN grating structure.The thickness of the final adjusted TiN and optical adhesive was obtained as an infrared filter having a peak at 2.0 ?m and a half-peak width of 21.26 nm.3?The effects of magnetron sputtering process on TiN film and high temperature annealing on the properties of TiN film were investigated.It was found that high temperature treatment has a decomposition effect on TiN film prepared by magnetron sputtering.By characterization and analysis of the morphology,composition and optical parameters of the film before and after high temperature treatment,it is found that the deposition atmosphere and the annealing process in the atmosphere have a great influence on the properties of TiN film.