Hexagonal Boron Nitride Based Nanomemristors

With the development of new information technologies such as TOI,big data,computing cloud and AI,the requirement for information storage is also increasing with the increased demand for information collection and analysis.Among the amount candidates to replace traditional memory system,resistive switching devices are considered as one of the most promising choices to become the mainstream technology in the future.Memristors as the basic unit of resistive random access memory attract much attention.In this work,we used the two-dimensional material with excellent insulator property,hexagonal boron nitride,to fabricate the devices with metal/insulator layer/metal(MIM)structure.After the fabrication and characterization of micrometer scale memristors,electron beam lithography was used to fabricate devices in nanoscale to further confirm the application of this kind devices in the information industry.Through electric characterization,the nanosize devices also show bipolar behavior and high ON/OFF ratio up to 1011.We also found that the memristors with Ag as top electrode show the lowest power consumption in standby state ever reported.Based on the result we got about the Cross-point structure memristors based on h-BN,we studied the electrical properties of the memristors consist of h-BN with different thickness and different metals.The result shows that the devices with the Ag as top electrode show stable threshold resistive switching and they are possible to be applied in the research of selectors and/or electrical synapse in neurocomputing.In the Crossbar structure h-BN based memristors,the devices with Ag as top electrode also show threshold resistive switching behavior.Compared with Cross-point memristors the variability between devices is smaller and the yield is higher.