Application Of Electrospun Metal-oxides Nanofibers In The Field Of Field Effect Transistors

Due to the unique physical and chemical properties,such as excellent channel transport properties,suitable band gap,high carriers concentration or mobility,and brilliant stability,one dimensional?1D?mental-oxides semiconductors?e.g.ZnO,In₂O₃,SnO₂ and so on?show a great potential in the field of future field effect transistors?FET?.Currently,1D mental-oxides nanomaterials are synthesized via chemical vapor deposition?CVD?,metal organic chemical vapor deposition?MOCVD?,hydrothermal method,electrospinning?ES?and molecular beam expitaxy?MBE?and so on.However,CVD,MOCVD and MBE methods always have high cost and complicated experimental conditions,which don't fit for the application in large-scale integrate circuits.And,the nanomaterials fabricated by hydrothermal methods usually display a rough surface which will hinder the transport of carriers and further influence the devices performance.With the merits of low cost,high efficiency,high production and easy morphology modulation of NF,electrospinning can fabricate continuous and uniform NFs with the controllable morphology and high aspect ratio,which can be applied in future large-scale electronics.In this work,the main contents are included as followed:1.Based on electrospinning,In₂O₃ NFs FETs?NFFETs?are successfully fabricated,and their electronic properties are modulated and enhanced via simple Sr doping method.Beside,the interfacial adhesion properties are also enhanced by a simple UV lamp pretreatment.The best devices based on 3.6 mol%Sr doped In₂O₃NFFETs delivered a high mobility of 3.67 cm²V^-1s^-1,a suitable V_th of 4.8 V and a large on/off current ratio of 10⁸.With an aim to decrease the operation voltage,solution processed Al₂O₃ film was used as dielectric material.The operation voltage of 3.6 mol%Sr-In₂O₃/Al₂O₃ FET decreased from 40 V to 4 V and decreased by 10x,and the field effect mobility increased by 4.8x(17.2 cm²V^-1s^-1).2.ZnO NFFETs are fabricated using electrospinning,and we control their crystallinity,distribution of grain size,surface roughness,and device performance.The obtained optimal temperature is 500 ^oC,which reveals a large on/off current ratio of 10⁶ and a suitable V_th of 0.9 V.In order to further decrease the operation voltage of devices,solution processed Al₂O₃ film was employed as dielectric layer.The ZnO NFs/Al₂O₃ TFT delivered an impressive field effect mobility of 0.2 cm²/Vs.And the corresponding operation voltage decreased from 30 to 3 V.